SI6874EDQ-T1 Vishay/Siliconix, SI6874EDQ-T1 Datasheet - Page 3

• Manufacturer Part Number: SI6874EDQ-T1
• Description: MOSFET 20V 6.5A
• Manufacturer: Vishay/Siliconix

Specifications of SI6874EDQ-T1

• Product Category: MOSFET
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 5.3 A
• Resistance Drain-source Rds (on): 26 mOhms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSSOP-8
• Fall Time: 1300 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.2 W
• Rise Time: 1300 ns
• Factory Pack Quantity: 3000
• Typical Turn-off Delay Time: 5500 ns

Document Number: 71252
S-50695—Rev. B, 18-Apr-05
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.06
0.05
0.04
0.03
0.02
0.01
0.00
30
24
18
12
5
4
3
2
1
0
6
0
0
0
0
V
I
D
V
DS
= 6.5 A
GS
2
On-Resistance vs. Drain Current
3
= 10 V
V
6
= 1.8 V
DS
Output Characteristics
Q
g
− Drain-to-Source Voltage (V)
V
I
D
− Total Gate Charge (nC)
GS
4
− Drain Current (A)
= 5 thru 2 V
12
Gate Charge
6
1.5 V
6
18
9
V
GS
8
= 2.5 V
V
GS
12
24
10
= 4.5 V
15
30
12
2500
2000
1500
1000
500
1.8
1.6
1.4
1.2
1.0
0.8
0.6
30
24
18
12
6
0
0
−50
0.0
0
On-Resistance vs. Junction Temperature
C
rss
−25
V
I
D
GS
= 6.5 A
0.5
V
V
= 4.5 V
4
Transfer Characteristics
DS
GS
T
J
0
− Junction Temperature (_C)
− Drain-to-Source Voltage (V)
− Gate-to-Source Voltage (V)
C
oss
Capacitance
25
1.0
8
Vishay Siliconix
T
50
C
25_C
= −55_C
C
Si6874EDQ
1.5
iss
12
75
100
www.vishay.com
2.0
125_C
16
125
150
2.5
20
3