SI4501ADY-T1 Vishay/Siliconix, SI4501ADY-T1 Datasheet - Page 11

• Manufacturer Part Number: SI4501ADY-T1
• Description: MOSFET 30/8V 8.8/5.7A 1.3W
• Manufacturer: Vishay/Siliconix

Specifications of SI4501ADY-T1

• Product Category: MOSFET
• Transistor Polarity: N and P-Channel
• Drain-source Breakdown Voltage: 30 V, 8 V
• Gate-source Breakdown Voltage: +/- 20 V, +/- 8 V
• Continuous Drain Current: 8.8 A, 5.7 A
• Resistance Drain-source Rds (on): 18 mOhms, 42 mOhms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Fall Time: 8 ns at N Channel, 45 ns at P Channel
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.3 W
• Rise Time: 8 ns at N Channel, 45 ns at P Channel
• Factory Pack Quantity: 2500
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 35 ns at N Channel, 60 ns at P Channel

Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
www.vishay.com
22
Return to Index
Return to Index
(0.559)
0.022
Recommended Minimum Pads
Dimensions in Inches/(mm)
(4.369)
0.172
(1.270)
(0.711)
0.050
0.028
Document Number: 72606
Revision: 21-Jan-08