SI1901DL-T1 Vishay/Siliconix, SI1901DL-T1 Datasheet - Page 3
![no-image](/images/no-image-200.jpg)
SI1901DL-T1
Manufacturer Part Number
SI1901DL-T1
Description
MOSFET 20V 0.18A
Manufacturer
Vishay/Siliconix
Datasheet
1.SI1901DL-T1.pdf
(5 pages)
Specifications of SI1901DL-T1
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
- 180 mA
Resistance Drain-source Rds (on)
3.8 Ohms
Configuration
Dual
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-363
Fall Time
25 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
0.2 W
Rise Time
25 ns
Factory Pack Quantity
3000
Typical Turn-off Delay Time
19 ns
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI1901DL-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Document Number: 71304
S-01886—Rev. A, 28-Aug-00
1.2
1.0
0.8
0.6
0.4
0.2
10
0
8
6
4
2
0
8
6
4
2
0
0
0
0
V
I
D
DS
V
100
0.5
= 80 mA
On-Resistance vs. Drain Current
GS
V
= 6 V
DS
= 2.5 V
1
Q
Output Characteristics
g
– Drain-to-Source Voltage (V)
I
200
1.0
D
– Total Gate Charge (pC)
– Drain Current (A)
Gate Charge
300
1.5
2
4.5 V
400
2.0
V
5 V
GS
3
= 4.5 V
500
2.5
3.5 V
2.5 V
4 V
3 V
2 V
600
3.0
4
New Product
0.5
0.4
0.3
0.2
0.1
1.6
1.4
1.2
1.0
0.8
0.6
45
36
27
18
0
9
0
–50
0
0
On-Resistance vs. Junction Temperature
–25
V
I
D
GS
0.5
= 180 m A
V
V
= 4.5 V
C
DS
GS
T
rss
Transfer Characteristics
J
3
0
– Junction Temperature ( C)
– Drain-to-Source Voltage (V)
– Gate-to-Source Voltage (V)
1.0
C
Capacitance
oss
25
Vishay Siliconix
1.5
50
C
6
iss
T
25 C
C
75
= –55 C
Si1901DL
2.0
100
9
www.vishay.com
2.5
125 C
125
150
3.0
12
3