SI1901DL-T1 Vishay/Siliconix, SI1901DL-T1 Datasheet - Page 3

• Manufacturer Part Number: SI1901DL-T1
• Description: MOSFET 20V 0.18A
• Manufacturer: Vishay/Siliconix

Specifications of SI1901DL-T1

• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: - 180 mA
• Resistance Drain-source Rds (on): 3.8 Ohms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363
• Fall Time: 25 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 0.2 W
• Rise Time: 25 ns
• Factory Pack Quantity: 3000
• Typical Turn-off Delay Time: 19 ns

Document Number: 71304
S-01886—Rev. A, 28-Aug-00
1.2
1.0
0.8
0.6
0.4
0.2
10
0
8
6
4
2
0
8
6
4
2
0
0
0
0
V
I
D
DS
V
100
0.5
= 80 mA
On-Resistance vs. Drain Current
GS
V
= 6 V
DS
= 2.5 V
1
Q
Output Characteristics
g
– Drain-to-Source Voltage (V)
I
200
1.0
D
– Total Gate Charge (pC)
– Drain Current (A)
Gate Charge
300
1.5
2
4.5 V
400
2.0
V
5 V
GS
3
= 4.5 V
500
2.5
3.5 V
2.5 V
4 V
3 V
2 V
600
3.0
4
New Product
0.5
0.4
0.3
0.2
0.1
1.6
1.4
1.2
1.0
0.8
0.6
45
36
27
18
0
9
0
–50
0
0
On-Resistance vs. Junction Temperature
–25
V
I
D
GS
0.5
= 180 m A
V
V
= 4.5 V
C
DS
GS
T
rss
Transfer Characteristics
J
3
0
– Junction Temperature ( C)
– Drain-to-Source Voltage (V)
– Gate-to-Source Voltage (V)
1.0
C
Capacitance
oss
25
Vishay Siliconix
1.5
50
C
6
iss
T
25 C
C
75
= –55 C
Si1901DL
2.0
100
9
www.vishay.com
2.5
125 C
125
150
3.0
12
3