SI7461DP-T1 Vishay/Siliconix, SI7461DP-T1 Datasheet - Page 4

• Manufacturer Part Number: SI7461DP-T1
• Description: MOSFET 60V 14.4A 1.9W
• Manufacturer: Vishay/Siliconix

Specifications of SI7461DP-T1

• Product Category: MOSFET
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 8.6 A
• Resistance Drain-source Rds (on): 14.5 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK SO-8
• Fall Time: 20 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.9 W
• Rise Time: 20 ns
• Factory Pack Quantity: 3000
• Typical Turn-off Delay Time: 205 ns

Si7461DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
www.vishay.com
4
0.01
- 0.2
- 0.4
0.1
0.8
0.6
0.4
0.2
0.0
2
1
10
- 50
- 4
0.02
0.05
0.2
0.1
Duty Cycle = 0.5
- 25
0
10
Threshold Voltage
T
J
- 3
2 5
- Temperature (°C)
5 0
Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Ambient
Limited by R
I
0.01
D
100
0.1
10
7 5
= 250 µA
1
0.1
10
- 2
Limited
* V
100
I
D(on)
GS
DS(on)
Single Pulse
T
A
> minimum V
125
V
= 25 °C
DS
*
Safe Operating Area
Square Wave Pulse Duration (s)
- Drain-to-Source Voltage (V)
150
1
10
- 1
GS
at which R
BVDSS Limited
DS(on)
10
1
is specified
100
80
60
40
20
0
0.01
I
DM
Limited
Single Pulse Power, Junction-to-Ambient
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
DC
100
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
0.1
P
DM
JM
-
T
t
A
1
= P
Time (s)
t
2
DM
S10-2244-Rev. G, 04-Oct-10
1
Z
thJA
Document Number: 72567
thJA
100
t
t
1
2
(t)
= 52 °C/W
10
600
100