SI3911DV-T1 Vishay/Siliconix, SI3911DV-T1 Datasheet - Page 3

• Manufacturer Part Number: SI3911DV-T1
• Description: MOSFET 20V 2.2A
• Manufacturer: Vishay/Siliconix

Specifications of SI3911DV-T1

• Product Category: MOSFET
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 2.2 A
• Resistance Drain-source Rds (on): 0.145 Ohms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSOP-6
• Fall Time: 29 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 830 mW
• Rise Time: 29 ns
• Factory Pack Quantity: 3000
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 24 ns

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71380
S09-2276-Rev. C, 02-Nov-09
0.75
0.60
0.45
0.30
0.15
0.00
0.1
10
1
5
4
3
2
1
0
0.00
0
0
V
GS
= 1.8 V
V
I
Source-Drain Diode Forward Voltage
D
DS
On-Resistance vs. Drain Current
= 2.2 A
T
0.3
V
= 10 V
1
J
SD
= 150 °C
2
- Source-to-Drain Voltage (V)
Q
I
D
g
V
- Total Gate Charge (nC)
GS
- Drain Current (A)
Gate Charge
0.6
2
= 2.5 V
4
T
J
0.9
3
= 25 °C
V
GS
6
1.2
= 4.5 V
4
1.5
8
5
600
500
400
300
200
100
0.5
0.4
0.3
0.2
0.1
0.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
C
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
rss
- 25
V
I
D
GS
= 2.2 A
V
V
4
= 4.5 V
1
DS
GS
0
T
C
J
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
oss
- Junction Temperature (°C)
Capacitance
25
2
8
C
I
50
iss
D
Vishay Siliconix
= 2.2 A
12
3
75
Si3911DV
www.vishay.com
100
16
4
125
150
20
5
3