IS61LV256-12TLI-TR ISSI, Integrated Silicon Solution Inc, IS61LV256-12TLI-TR Datasheet - Page 8

• Manufacturer Part Number: IS61LV256-12TLI-TR
• Description: IC SRAM 256KBIT 12NS 28TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61LV256-12TLI-TR

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 256K (32K x 8)
• Speed: 12ns
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 28-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS62LV256
WRITE CYCLE NO. 2 (CE
Notes:
1. The internal write time is defined by the overlap of CE LOW and WE LOW. All signals must be in valid states to initiate a Write, but
2. I/O will assume the High-Z state if OE • V
8
AC WAVEFORMS
WRITE CYCLE NO. 1 (WE
any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of
the signal that terminates the Write.
ADDRESS
ADDRESS
D
D
OUT
WE
OUT
D
WE
D
CE
CE
IN
IN
CE
CE
CE Controlled)
CE
WE
WE
WE
WE Controlled)
DATA UNDEFINED
t
t
SA
DATA UNDEFINED
SA
IH
.
(1,2)
Integrated Silicon Solution, Inc. — www.issi.com —
t
HZWE
(1,2)
t
AW
t
HZWE
t
AW
t
t
t
SCE
PWE
SCE
t
t
WC
WC
t
PWE
HIGH-Z
HIGH-Z
t
t
SD
SD
DATA-IN VALID
DATA-IN VALID
t
t
HA
HA
t
t
t
t
HD
LZWE
LZWE
HD
ISSI
1-800-379-4774
12/11/02
Rev. K
®