TN0606N5 Supertex, TN0606N5 Datasheet
TN0606N5
Specifications of TN0606N5
Related parts for TN0606N5
TN0606N5 Summary of contents
Page 1
... MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired ...
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... 1.5A 25Ω GEN - 16 0 PULSE OUTPUT R GEN D.U.T. INPUT ● Tel: 408-222-8888 ● www.supertex.com TN0606 I † DRM (A) 3.2 = 1.0mA = 1.0mA = 1.0mA = Max Rating = 125°C = 25V DS = 25V DS = 250mA D = 750mA D = 750mA D = 750mA 1.5A = 1.5A ...
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... Saturation Characteristics (volts) DS Power Dissipation vs. Case Temperature 2.0 TO-92 1 100 125 T ° Thermal Response Characteristics 1.0 0.8 0.6 0.4 0.2 TO- 25° 0.001 0.01 0 (seconds) p ● Tel: 408-222-8888 ● www.supertex.com TN0606 10V 150 10 ...
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... I (amperes and R Variation with Temperature (th 1mA (th) 1 10V, 0.75A 1.0 DS 0.8 0.6 - 100 Gate Drive Dynamic Characteristics 10V 40V 6 DS 172 1.5 0 0.5 1.0 2.0 Q (nanocoulombs) G ● Tel: 408-222-8888 ● www.supertex.com TN0606 10 2.0 1.6 1.2 0.8 0.4 0 150 2.5 ...
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... Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship ...