SI5504DC-T1 Vishay/Siliconix, SI5504DC-T1 Datasheet - Page 7

• Manufacturer Part Number: SI5504DC-T1
• Description: MOSFET 30V 3.9/2.8A
• Manufacturer: Vishay/Siliconix

Specifications of SI5504DC-T1

• Product Category: MOSFET
• Transistor Polarity: N and P-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.9 A, 2.8 A
• Resistance Drain-source Rds (on): 85 mOhms, 165 mOhms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: 1206-8 ChipFET
• Fall Time: 12 ns at N Channel, 11 ns at P Channel
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.1 W
• Rise Time: 12 ns at N Channel, 11 ns at P Channel
• Factory Pack Quantity: 3000
• Typical Turn-off Delay Time: 12 ns at N Channel, 14 ns at P Channel

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71056.
Document Number: 71056
S10-0547-Rev. C, 08-Mar-10
0.01
0.01
0.1
0.1
2
1
2
1
10
10
-4
-4
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
Single Pulse
Single Pulse
10
-3
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-2
Square Wave Pulse Duration (s)
10
Square Wave Pulse Duration (s)
-2
10
-1
10
1
-1
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10
Notes:
P
DM
JM
- T
A
t
1
1
= P
t
Vishay Siliconix
2
DM
Z
thJA
thJA
100
Si5504DC
t
t
(t)
1
2
= 90 °C/W
www.vishay.com
600
10
7