SI1913EDH-T1 Vishay/Siliconix, SI1913EDH-T1 Datasheet - Page 6

• Manufacturer Part Number: SI1913EDH-T1
• Description: MOSFET 20V 1.0A
• Manufacturer: Vishay/Siliconix

Specifications of SI1913EDH-T1

• Product Category: MOSFET
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 1 A
• Resistance Drain-source Rds (on): 0.49 Ohms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363-6
• Fall Time: 480 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 740 mW
• Rise Time: 480 ns
• Factory Pack Quantity: 3000
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 840 ns

Document Number: 71154
06-Jul-01
6
1
e
e
D
5
2
1
b
4
3
-A-
E
-B-
A
A
1
2
1
E
A
c
L
ECN: S-03946—Rev. B, 09-Jul-01
DWG: 5550
Dim
A
A
E
e
A
D
b
E
L
c
e
1
1
1
2
Min
0.90
0.80
0.15
0.10
1.80
1.80
1.15
1.20
0.10
–
Package Information
0.65BSC
7_Nom
Nom
2.00
2.10
1.25
1.30
0.20
–
–
–
–
–
Max
1.10
0.10
1.00
0.30
0.25
2.20
2.40
1.35
1.40
0.30
Vishay Siliconix
0.035
0.031
0.006
0.004
0.071
0.071
0.045
0.047
0.004
Min
–
0.026BSC
7_Nom
Nom
0.079
0.083
0.049
0.051
0.008
www.vishay.com
–
–
–
–
–
Max
0.043
0.004
0.039
0.012
0.010
0.087
0.094
0.053
0.055
0.012
1