SI3909DV-T1 Vishay/Siliconix, SI3909DV-T1 Datasheet - Page 4

• Manufacturer Part Number: SI3909DV-T1
• Description: MOSFET 20V 1.8A
• Manufacturer: Vishay/Siliconix

Specifications of SI3909DV-T1

• Product Category: MOSFET
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 1.8 A
• Resistance Drain-source Rds (on): 0.2 Ohms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSOP-6
• Fall Time: 34 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.15 W
• Rise Time: 34 ns
• Factory Pack Quantity: 3000
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 19 ns

Si3909DV
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
0.1
0.6
0.4
0.2
0.0
10
0.01
1
0.1
- 50
2
1
0
10
-4
0.02
0.05
Duty Cycle = 0.5
0.2
0.1
Source-Drain Diode Forward Voltage
- 25
T
0.3
J
V
= 150 °C
SD
0
- Source-to-Drain Voltage (V)
Single Pulse
I
Threshold Voltage
D
T
10
J
= 250 µA
25
- Temperature (°C)
0.6
-3
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.9
T
75
J
= 25 °C
10
100
-2
1.2
125
1.5
150
Square Wave Pulse Duration (s)
10
-1
1
0.6
0.5
0.4
0.3
0.2
0.1
8
6
4
2
0
0
0.01
0
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
I
D
1
= 1.2 A
V
GS
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
0.1
10
Notes:
P
- Gate-to-Source Voltage (V)
DM
JM
- T
A
2
Time (s)
t
1
= P
S09-2276-Rev. B, 02-Nov-09
t
DM
2
I
D
Z
Document Number: 70968
= 1.8 A
thJA
thJA
1
100
3
(t)
t
t
1
2
= 130 °C/W
4
10
600
30
5