SI1029X-T1 Vishay/Siliconix, SI1029X-T1 Datasheet - Page 7
SI1029X-T1
Manufacturer Part Number
SI1029X-T1
Description
MOSFET 60V 0.5A
Manufacturer
Vishay/Siliconix
Datasheet
1.SI1029X-T1.pdf
(10 pages)
Specifications of SI1029X-T1
Product Category
MOSFET
Transistor Polarity
N and P-Channel
Drain-source Breakdown Voltage
+/- 60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.305 A, - 190 A
Resistance Drain-source Rds (on)
3 Ohms, 8 Ohms
Configuration
Dual
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SC-89-6
Minimum Operating Temperature
- 55 C
Power Dissipation
250 mW
Factory Pack Quantity
3000
Tradename
TrenchFET
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI1029X-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
N- OR P-CHANNEL TYPICAL CHARACTERISTICS (T
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71435.
Document Number: 71435
S10-2432-Rev. C, 25-Oct-10
0.01
0.1
2
1
10
-4
0.2
0.1
Duty Cycle = 0.5
0.05
0.02
10
Single Pulse
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-2
Square Wave Pulse Duration (s)
10
-1
A
= 25 °C, unless otherwise noted)
1
1
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
0
P
DM
JM
- T
t
A
1
= P
t
2
DM
Vishay Siliconix
Z
thJA
thJA
100
t
t
1
2
(t)
= 500 °C/W
Si1029X
www.vishay.com
6
0
0
7