TP2640N3 Supertex, TP2640N3 Datasheet - Page 2
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TP2640N3
Manufacturer Part Number
TP2640N3
Description
MOSFET 400V 15Ohm
Manufacturer
Supertex
Datasheet
1.TP2640LG-G.pdf
(5 pages)
Specifications of TP2640N3
Product Category
MOSFET
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 400 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
- 180 mA
Resistance Drain-source Rds (on)
15 Ohms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-92
Minimum Operating Temperature
- 55 C
Power Dissipation
1 W
Factory Pack Quantity
1000
Typical Turn-off Delay Time
60 ns
Thermal Characteristics
Notes:
Electrical Characteristics
N- Channel Switching Waveforms and Test Circuit
Notes:
Package
ΔR
ΔV
R
BV
TO-92
V
† I
Sym
t
I
C
C
t
1.
2.
C
d(OFF)
I
I
G
V
D(ON)
DS(ON)
d(ON)
GS(th)
GSS
DSS
DS(ON)
t
OSS
RSS
t
GS(th)
t
ISS
SD
rr
DSS
FS
r
f
D
(continuous) is limited by max rated T
All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.)
All A.C. parameters sample tested.
OUTPUT
Parameter
Drain-to-source breakdown voltage
Gate threshold voltage
Change in V
Gate body leakage
Zero gate voltage drain current
On-state drain current
Static drain-to-source on-state resistance
Change in R
Forward transconductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Diode forward voltage drop
Reverse recovery time
INPUT
(continuous)
-10V
V
0V
0V
DD
-180
(mA)
I
D
10%
GS(th)
DS(ON)
†
t
d(ON)
with temperature
with temperature
10%
t
(ON)
(pulsed)
t
●
-0.8
r
(A)
I
1235 Bordeaux Drive, Sunnyvale, CA 94089
D
90%
j
.
(T
A
= 25°C unless otherwise specified)
90%
t
d(OFF)
Power Dissipation
t
90%
(OFF)
@T
t
f
C
10%
(W)
1.0
= 25
O
C
-350
Min
-0.8
-0.7
200
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2
GENERATOR
Typ
300
12
11
11
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
PULSE
(
O
125
C/W)
θ
jc
●
INPUT
R
GEN
Tel: 408-222-8888
-10.0
Max
-100
0.75
-2.0
-1.0
-1.0
-1.8
300
15
15
15
50
12
10
15
60
40
5
-
-
-
-
(
mV/
O
mmho
170
Units
%/
C/W)
θ
mA
nA
µA
pF
ns
ns
ja
Ω
V
V
V
A
O
O
C
C
●
www.supertex.com
Conditions
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
f = 1.0MHz
V
I
R
V
V
D
GS
GS
GS
GS
GS
GS
DS
GS
GS
GS
GS
GS
GS
DS
GS
DS
DD
GS
GS
GEN
= -300mA,
V
R
= 0.8 Max Rating,
= -25V, I
= -25V,
= 0V, I
= V
= V
= ±20V, V
= 0V, V
= 0V, V
= 0V, T
= -10V, V
= -2.5V, I
= -4.5V, I
= -10V, I
= -10V, I
= 0V,
= -25V,
= 0V, I
= 0V, I
DD
-180
(mA)
L
I
= 25Ω
DR
D.U.T.
Output
DS
DS
†
, I
, I
D
SD
SD
A
D
D
DS
DS
= -2.0mA
D
= 125
D
D
= -1.0mA
= -1.0mA
= -200mA
= -200mA
D
D
DS
DS
= -100V
= Max rating
= -300mA
= -300mA
= -300mA
= -20mA
= -150mA
TP2635
= -25V
= 0V
O
-0.8
I
C
DRM
(A)