SI1917EDH-T1 Vishay/Siliconix, SI1917EDH-T1 Datasheet - Page 3

• Manufacturer Part Number: SI1917EDH-T1
• Description: MOSFET 10V 1.15A
• Manufacturer: Vishay/Siliconix

Specifications of SI1917EDH-T1

• Product Category: MOSFET
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 1.15 A
• Resistance Drain-source Rds (on): 0.37 Ohms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363-6
• Fall Time: 470 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 730 mW
• Rise Time: 470 ns
• Factory Pack Quantity: 3000
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 960 ns

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71414
S10-1054-Rev. B, 03-May-10
1.2
0.9
0.6
0.3
0.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
5
4
3
2
1
0
0.0
0.0
0
0.2
V
I
0.5
D
On-Resistance vs. Drain Current
DS
= - 1 A
= 6 V
V
1
DS
Output Characteristics
0.4
Q
V
g
- Drain-to-Source Voltage (V)
1.0
GS
- Total Gate Charge (nC)
I
D
Gate Charge
- Drain Current (A)
= 1.8 V
0.6
V
V
1.5
GS
GS
2
0.8
= 2.5 V
= 5 V thru 3 V
2.0
1.0
V
3
GS
1.5 V
2.5
= 4.5 V
1.2
2.5 V
2 V
1.4
3.0
4
200
160
120
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.6
1.4
1.2
1.0
0.8
0.6
80
40
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
C
V
I
D
- 25
rss
GS
0.5
= - 1 A
2
= 4.5 V
V
V
DS
GS
T
Transfer Characteristics
0
1.0
J
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
4
25
Capacitance
C
C
oss
1.5
iss
50
6
Vishay Siliconix
T
25 °C
C
2.0
= - 55 °C
Si1917EDH
75
8
2.5
www.vishay.com
100
125 °C
10
3.0
125
3.5
150
12
3