Si87xxSOIC8-KIT Silicon Labs, Si87xxSOIC8-KIT Datasheet - Page 15

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Si87xxSOIC8-KIT

Manufacturer Part Number
Si87xxSOIC8-KIT
Description
Interface Development Tools SOIC8 Evaluation Kit
Manufacturer
Silicon Labs
Type
Isolatorsr
Datasheet

Specifications of Si87xxSOIC8-KIT

Rohs
yes
Product
Evaluation Kits
Tool Is For Evaluation Of
SI87xxSOIC8
New designs should consider the input circuit configurations of Figure 9, which are more efficient than those of
Figures 7 and 8. As shown, S1 and S2 represent any suitable switch, such as a BJT or MOSFET, analog
transmission gate, processor I/O, etc. Also, note that the Si87xx input can be driven from the I/O port of any MCU
or FPGA capable of sourcing a minimum of 6 mA (see Figure 9B). Additionally, note that the Si87xx propagation
delay and output drive do not significantly change for values of I
4.2. Output Circuit Design and Power Supply Connections
The speed of the open collector circuit is dependent upon the supply, VCC, the pullup resistor, R
modeled by C
R
to ensure proper V
the V
than 0.5 V. Figure 10C illustrates a circuit using the internal 20 k resistor.
Note that GND can be biased at, above, or below ground as long as the voltage on V
maximum of 30 V. V
optimum values for these capacitors depend on load current and the distance between the chip and its power
source. It is recommended that 0.1 and 1 µF bypass capacitors be used to reduce high-frequency noise and
maximize performance. Opto replacement applications should limit their supply voltages to 30 V or less.
L
>350 is recommended to ensure proper V
O
Si87xx
pullup resistor, the enable pin should be referenced to the V
A
VDD
GND
VO
VE
L
. Figure 10 illustrates three common circuit output configurations. For V
8
7
6
5
Control
OL
Input
VCC 3-30 V
EN
DD
levels. If the enable pin is used (see Figure 10B) and two separate supplies power V
S1
decoupling capacitors should be placed as close to the package pins as possible. The
R
C
Figure 9. Si87xx Other Input Circuit Configurations
L
L
+5V
Figure 10. Si87xx Output Circuit Configurations
0.1, 1 µF
R1
S2
Si87xx
1
2
3
4
N/C
N/C
ANODE
CATHODE
B
Si87xx
VDD
GND
OL
Preliminary Rev. 0.5
A
VO
VE
levels. For V
0.1, 1 µF
VCC1 3-30 V
8
7
6
5
EN
VCC2 3-30 V
DD
F
MCU I/O
Port pin
between I
R
C
= 30 V operation, R
DD
L
L
pin because V
R1
F(MIN)
1
2
3
4
Si87xx
N/C
N/C
ANODE
CATHODE
C
and I
VDD
Si87xx
O
GND
VL
VO
B
cannot exceed V
DD
L
F(MAX)
> 2.1 kis recommended
with respect to GND is a
8
7
6
5
VCC 3-30 V
.
DD
= 5 V operation,
R
C
Si87xx
L
L
L
, and the load
DD
0.1, 1 µF
by more
DD
and
15

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