IS61WV25616BLL-10TL-TR ISSI, Integrated Silicon Solution Inc, IS61WV25616BLL-10TL-TR Datasheet - Page 11

• Manufacturer Part Number: IS61WV25616BLL-10TL-TR
• Description: IC SRAM 4MBIT 10NS 44TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61WV25616BLL-10TL-TR

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 4M (256K x 16)
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 2.4 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 44-TSOP II
• Density: 4Mb
• Access Time (max): 10ns
• Sync/async: Asynchronous
• Architecture: Not Required
• Clock Freq (max): Not RequiredMHz
• Operating Supply Voltage (typ): 2.5/3.3V
• Address Bus: 18b
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Number Of Ports: 1
• Supply Current: 35mA
• Operating Supply Voltage (min): 2.4V
• Operating Supply Voltage (max): 3.6V
• Operating Temperature Classification: Commercial
• Mounting: Surface Mount
• Pin Count: 44
• Word Size: 16b
• Number Of Words: 256K
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS61WV25616ALL/ALS, IS61WV25616BLL/BLS,
IS64WV25616BLL/BLS
Integrated Silicon Solution, Inc. — www.issi.com
Rev. G
07/15/2010
READ CYCLE NO. 2
Notes:
1. WE is HIGH for a Read Cycle.
2. The device is continuously selected. OE, CE, UB, or LB = V
3. Address is valid prior to or coincident with CE LOW transition.
AC WAVEFORMS
READ CYCLE NO. 1
ADDRESS
ADDRESS
LB, UB
Current
Supply
D
D
V
OUT
OUT
OE
CE
DD
(1,2)
(1,3)
HIGH-Z
t
(Address Controlled) (CE = OE = V
LZCE
PREVIOUS DATA VALID
t
LZB
t
PU
t
AA
50%
t
DOE
t
t
t
LZOE
ACE
BA
t
OHA
IL
.
t
RC
t
IL
t
RC
AA
, UB or LB = V
t
DATA VALID
RC
t
HZCE
IL
)
t
DATA VALID
PD
t
t
t
t
OHA
HZB
HZOE
OHA
50%
UB_CEDR2.eps
READ1.eps
I
I
CC
SB
11
1
2
3
4
5
6
7
8
9
10
11
12