IS61WV25616BLL-10TL-TR ISSI, Integrated Silicon Solution Inc, IS61WV25616BLL-10TL-TR Datasheet - Page 12

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IS61WV25616BLL-10TL-TR

Manufacturer Part Number
IS61WV25616BLL-10TL-TR
Description
IC SRAM 4MBIT 10NS 44TSOP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet

Specifications of IS61WV25616BLL-10TL-TR

Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
4M (256K x 16)
Speed
10ns
Interface
Parallel
Voltage - Supply
2.4 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
44-TSOP II
Density
4Mb
Access Time (max)
10ns
Sync/async
Asynchronous
Architecture
Not Required
Clock Freq (max)
Not RequiredMHz
Operating Supply Voltage (typ)
2.5/3.3V
Address Bus
18b
Package Type
TSOP-II
Operating Temp Range
0C to 70C
Number Of Ports
1
Supply Current
35mA
Operating Supply Voltage (min)
2.4V
Operating Supply Voltage (max)
3.6V
Operating Temperature Classification
Commercial
Mounting
Surface Mount
Pin Count
44
Word Size
16b
Number Of Words
256K
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IS61WV25616ALL/ALS, IS61WV25616BLL/BLS,
IS64WV25616BLL/BLS
WRITE CYCLE SWITCHING CHARACTERISTICS
12
Symbol
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0V to
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. The internal write time is defined by the overlap of CE LOW and UB or LB, and WE LOW. All signals must be in valid states
t
t
t
t
t
t
t
t
t
t
t
t
WC
HD
SCE
AW
HA
SA
PWB
PWE
PWE
SD
HZWE
LZWE
3.0V and output loading specified in Figure 1.
to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced
to the rising or falling edge of the signal that terminates the write. Shaded area product in development
1
2
(2)
(2)
Parameter
Write Cycle Time
CE to Write End
Address Setup Time
to Write End
Address Hold from Write End
Address Setup Time
LB, UB Valid to End of Write
WE Pulse Width
WE Pulse Width (OE = LOW)
Data Setup to Write End
Data Hold from Write End
WE LOW to High-Z Output
WE HIGH to Low-Z Output
Min.
6.5
6.5
6.5
6.5
8.0
8
0
0
5
0
2
-8
Max.
3.5
(1,3)
(Over Operating Range)
Integrated Silicon Solution, Inc. — www.issi.com
Min.
10
10
8
8
0
0
8
8
6
0
2
-10
Max.
5
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
07/15/2010
Rev. G

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