IS61C5128AS-25QLI-TR ISSI, Integrated Silicon Solution Inc, IS61C5128AS-25QLI-TR Datasheet - Page 10

• Manufacturer Part Number: IS61C5128AS-25QLI-TR
• Description: IC SRAM 4MBIT 25NS 32SOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61C5128AS-25QLI-TR

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 4M (512K x 8)
• Speed: 25ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 32-SOP
• Density: 4Mb
• Access Time (max): 25ns
• Sync/async: Asynchronous
• Architecture: Not Required
• Clock Freq (max): Not RequiredMHz
• Operating Supply Voltage (typ): 5V
• Address Bus: 19b
• Package Type: SOP
• Operating Temp Range: -40C to 85C
• Number Of Ports: 1
• Supply Current: 15mA
• Operating Supply Voltage (min): 4.5V
• Operating Supply Voltage (max): 5.5V
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 32
• Word Size: 8b
• Number Of Words: 512K
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Compliant, Lead free / RoHS Compliant

AC WAVEFORMS
WRITE CYCLE NO. 1 (WE
IS61C5128AL/AS
Notes:
1. The internal write time is defined by the overlap of CE LOW and WE LOW. All signals must be in valid states to initiate a Write,
2. I/O will assume the High-Z state if OE
10
ADDRESS
but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling
edge of the signal that terminates the Write.
D
OUT
WE
D
CE
IN
DATA UNDEFINED
t
SA
WE
WE Controlled)
WE
WE
IS64C5128AL/AS
≥
V
IH
.
(1,2)
t
HZWE
t
VALID ADDRESS
AW
t
t
PWE1
PWE2
t
t
SCS
WC
HIGH-Z
Integrated Silicon Solution, Inc. — www.issi.com
t
SD
DATA
IN
VALID
t
HD
t
LZWE
t
HA
CE_WR1.eps
03/04/2008
Rev. B