IS61C5128AS-25QLI-TR ISSI, Integrated Silicon Solution Inc, IS61C5128AS-25QLI-TR Datasheet - Page 4

• Manufacturer Part Number: IS61C5128AS-25QLI-TR
• Description: IC SRAM 4MBIT 25NS 32SOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61C5128AS-25QLI-TR

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 4M (512K x 8)
• Speed: 25ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 32-SOP
• Density: 4Mb
• Access Time (max): 25ns
• Sync/async: Asynchronous
• Architecture: Not Required
• Clock Freq (max): Not RequiredMHz
• Operating Supply Voltage (typ): 5V
• Address Bus: 19b
• Package Type: SOP
• Operating Temp Range: -40C to 85C
• Number Of Ports: 1
• Supply Current: 15mA
• Operating Supply Voltage (min): 4.5V
• Operating Supply Voltage (max): 5.5V
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 32
• Word Size: 8b
• Number Of Words: 512K
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Compliant, Lead free / RoHS Compliant

IS61C5128AL/AS
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
CAPACITANCE
DC ELECTRICAL CHARACTERISTICS
4
Mode
Not Selected
Output Disabled
Read
Write
Symbol
V
T
P
I
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
Symbol
C
C
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
Symbol Parameter
V
V
V
V
I
I
Note:
OUT
LO
LI
STG
TERM
T
OUT
OH
OL
IH
IL
IN
damage to the device. This is a stress rating only and functional operation of the device at these or
any other conditions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
1. V
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Output Leakage
Parameter
Terminal Voltage with Respect to GND
Storage Temperature
Power Dissipation
DC Output Current (LOW)
IL
= –3.0V for pulse width less than 10 ns.
Parameter
Input Capacitance
Output Capacitance
(1,2)
A
= 25°C, f = 1 MHz, V
WE
WE
WE
WE
WE
X
H
H
L
IS64C5128AL/AS
(1)
CE
CE
CE
CE
CE
H
L
L
L
Test Conditions
V
V
Outputs Disabled
GND ≤ V
GND ≤ V
DD
DD
DD
(1)
= Min., I
= Min., I
= 5.0V.
OE
OE
OE
OE
OE
X
H
X
L
OUT
IN
(Over Operating Range)
Conditions
≤ V
V
V
OH
≤ V
OL
OUT
I/O0-I/O7
IN
DD
High-Z
High-Z
= 8.0 mA
D
= –4.0 mA
DD
= 0V
D
= 0V
OUT
IN
–0.5 to +7.0
–65 to +150
Value
1.5
20
V
Integrated Silicon Solution, Inc. — www.issi.com
DD
I
I
I
I
SB
CC
CC
CC
I/O PIN
Current
1
1
1
1
, I
, I
, I
, I
CC
CC
CC
SB
Max.
2
2
2
2
5
7
Unit
mA
°C
W
V
Com.
Auto.
Com.
Auto.
Ind.
Ind.
Unit
pF
pF
Min.
–0.3
2.4
2.2
–2
—
–1
–2
–5
–1
–5
V
DD
Max.
0.4
0.8
—
1
2
5
1
2
5
+ 0.5
03/04/2008
Unit
µA
µA
V
V
V
V
Rev. B