IS61LV2568L-10TL-TR ISSI, Integrated Silicon Solution Inc, IS61LV2568L-10TL-TR Datasheet - Page 9

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IS61LV2568L-10TL-TR

Manufacturer Part Number
IS61LV2568L-10TL-TR
Description
IC SRAM 2MBIT 10NS 44TSOP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet

Specifications of IS61LV2568L-10TL-TR

Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
2M (256K x 8)
Speed
10ns
Interface
Parallel
Voltage - Supply
3.135 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
44-TSOP II
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IS61LV2568L
AC WAVEFORMS
WRITE CYCLE NO. 1
Integrated Silicon Solution, Inc. — www.issi.com —
Rev. D
04/28/08
Note:
1. The internal Write time is defined by the overlap of CE = LOW and WE = LOW. All signals must be in valid states to initiate a
Write, but any can be deasserted to terminate the Write. The Data Input Setup and Hold timing is referenced to the rising or
falling edge of the signal that terminates the Write.
ADDRESS
D
OUT
WE
D
CE
IN
(1,2)
DATA UNDEFINED
t
SA
(CE Controlled, OE = HIGH or LOW)
t
HZWE
t
VALID ADDRESS
AW
t
t
1-800-379-4774
PWE1
PWE2
t
t
SCE
WC
HIGH-Z
t
SD
DATA
IN
VALID
t
HD
t
LZWE
t
HA
CE_WR1.eps
9

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