MT48LC8M16A2P-75:G Micron Technology Inc, MT48LC8M16A2P-75:G Datasheet - Page 62

IC SDRAM 128MBIT 133MHZ 54TSOP

MT48LC8M16A2P-75:G

Manufacturer Part Number
MT48LC8M16A2P-75:G
Description
IC SDRAM 128MBIT 133MHZ 54TSOP
Manufacturer
Micron Technology Inc
Type
SDRAMr

Specifications of MT48LC8M16A2P-75:G

Memory Type
SDRAM
Format - Memory
RAM
Memory Size
128M (8Mx16)
Speed
133MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
54-TSOP II
Memory Configuration
16M X 8
Access Time
5.4ns
Page Size
128Mbit
Memory Case Style
TSOP
No. Of Pins
54
Operating Temperature Range
0°C To +70°C
Organization
8Mx16
Density
128Mb
Address Bus
14b
Access Time (max)
6/5.4ns
Maximum Clock Rate
133MHz
Operating Supply Voltage (typ)
3.3V
Package Type
TSOP-II
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
150mA
Pin Count
54
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT48LC8M16A2P-75:G
Manufacturer:
MICRON
Quantity:
8
Part Number:
MT48LC8M16A2P-75:G
Manufacturer:
MICRON
Quantity:
8 000
Part Number:
MT48LC8M16A2P-75:G
Manufacturer:
MICRON
Quantity:
20 000
Figure 47:
PDF: 09005aef80725c0b/Source: 09005aef806fc13c
64MSDRAM_2.fm - Rev. M 10/07 EN
DQML, DQMH
COMMAND
A0-A9, A11
BA0, BA1
DQM /
CLK
CKE
A10
DQ
t CMS
t CKS
t AS
t AS
t AS
WRITE – Without Auto Precharge
ACTIVE
T0
ROW
ROW
BANK
t CKH
t CMH
Notes:
t AH
t AH
t AH
t RCD
t RAS
t RC
t CK
T1
1. For this example, BL = 4, and the WRITE burst is followed by a “manual” PRECHARGE.
2. 15ns is required between <D
3. x16: A8, A9 and A11 = “Don’t Care”
NOP
frequency.
x8: A9 and A11 = “Don’t Care”
x4: A11 = “Don’t Care”
DISABLE AUTO PRECHARGE
t CMS
t CL
t DS
COLUMN m 3
WRITE
T2
BANK
D
IN
t CMH
t CH
t DH
m
t DS
D
T3
IN
NOP
m + 1
t DH
62
t DS
IN
D
m> and the PRECHARGE command, regardless of
IN
T4
NOP
m + 2
t DH
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t DS
D
IN
NOP
T5
m + 3
t DH
t WR
SINGLE BANK
PRECHARGE
ALL BANKS
2
BANK
T6
64Mb: x4, x8, x16 SDRAM
©2000 Micron Technology, Inc. All rights reserved.
NOP
t RP
T7
Timing Diagrams
ACTIVE
ROW
ROW
BANK
T8
DON’T CARE

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