MT48H8M16LFB4-6 IT:K Micron Technology Inc, MT48H8M16LFB4-6 IT:K Datasheet - Page 51
MT48H8M16LFB4-6 IT:K
Manufacturer Part Number
MT48H8M16LFB4-6 IT:K
Description
IC SDRAM 128MBIT 166MHZ 54VFBGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT48H8M16LFB4-6K.pdf
(86 pages)
Specifications of MT48H8M16LFB4-6 IT:K
Format - Memory
RAM
Memory Type
Mobile SDRAM
Memory Size
128M (8Mx16)
Speed
166MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
-40°C ~ 85°C
Package / Case
54-VFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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- Download datasheet (3Mb)
Figure 20: READ-to-WRITE With Extra Clock Cycle
Figure 21: READ-to-PRECHARGE
PDF: 09005aef832ff1ea
128mb_mobile_sdram_y35M.pdf - Rev. G 10/09 EN
Note:
Note:
Command
Command
Command
Address
Address
Address
1. CL = 3. The READ command can be issued to any bank, and the WRITE command can be
1. DQM is LOW.
DQM
CLK
to any bank.
CLK
CLK
DQ
DQ
DQ
Bank a,
Bank a,
Bank,
T0
T0
Col n
T0
READ
Col n
READ
READ
Col
CL = 2
CL = 3
T1
T1
T1
NOP
NOP
NOP
128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM
51
T2
T2
T2
NOP
NOP
NOP
D
OUT
Transitioning data
T3
T3
T3
Micron Technology, Inc. reserves the right to change products or specifications without notice.
NOP
NOP
NOP
D
D
D
t HZ
OUT
OUT
OUT
PRECHARGE
PRECHARGE
(a or all)
(a or all)
T4
T4
T4
Bank
Bank
NOP
X = 1 cycle
D
D
Transitioning data
OUT
OUT
X = 2 cycles
T5
T5
T5
Don’t Care
Bank,
WRITE
Col b
NOP
NOP
D
D
D
OUT
OUT
IN
t DS
t RP
t RP
©2008 Micron Technology, Inc. All rights reserved.
T6
T6
READ Operation
NOP
NOP
D
OUT
Don’t Care
ACTIVE
Bank a,
ACTIVE
Bank a,
T7
T7
Row
Row
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