MT48H4M16LFB4-8 IT:H Micron Technology Inc, MT48H4M16LFB4-8 IT:H Datasheet - Page 58
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MT48H4M16LFB4-8 IT:H
Manufacturer Part Number
MT48H4M16LFB4-8 IT:H
Description
IC SDRAM 64MBIT 125MHZ 54VFBGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT48H4M16LFB4-75_ITH_TR.pdf
(62 pages)
Specifications of MT48H4M16LFB4-8 IT:H
Format - Memory
RAM
Memory Type
Mobile SDRAM
Memory Size
64M (4M x 16)
Speed
125MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
-40°C ~ 85°C
Package / Case
54-VFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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Figure 45:
PDF: 09005aef8237ed98/Source: 09005aef8237ed68
64mb_x16_Mobile SDRAM_Y24L_2.fm - Rev. C 10/07 EN
A0–A9, A11
Command
BA0, BA1
DQM
A10
CLK
CKE
DQ
t CKS
t CMS
t AS
t AS
t AS
ACTIVE
Row
Row
Bank
T0
Single WRITE – Without Auto Precharge
t CKH
t CMH
t AH
t AH
t AH
Notes:
t RCD
t RAS
t RC
t CK
T1
NOP
1. For this example, the BL = 1, and the WRITE burst is followed by a “manual” PRECHARGE.
2. 15ns is required between <D
3. A8, A9, and A11 = “Don’t Care.”
4. PRECHARGE command not allowed or
Disable auto precharge
t CMS
t CL
t DS
Column m 3
Bank
WRITE
T2
D
IN
t CMH
t CH
t DH
m
t WR
2
NOP 4
T3
58
IN
NOP 4
T4
m> and the PRECHARGE command, regardless of frequency.
t
Micron Technology, Inc., reserves the right to change products or specifications without notice.
RAS would be violated.
Single bank
PRECHARGE
All banks
Bank
T5
64Mb: 4 Meg x 16 Mobile SDRAM
t RP
T6
NOP
©2006 Micron Technology, Inc. All rights reserved.
ACTIVE
Bank
Row
T7
Timing Diagrams
NOP
T8
Don’t Care
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