IS61LV2568L-10T ISSI, Integrated Silicon Solution Inc, IS61LV2568L-10T Datasheet - Page 3

• Manufacturer Part Number: IS61LV2568L-10T
• Description: IC SRAM 2MBIT 10NS 44TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61LV2568L-10T

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 2M (256K x 8)
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 44-TSOP II
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IS61LV2568L
ABSOLUTE MAXIMUM RATINGS
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a
DC ELECTRICAL CHARACTERISTICS
Note:
1. V
Integrated Silicon Solution, Inc. — www.issi.com —
Rev. D
04/28/08
TRUTH TABLE
OPERATING RANGE
Symbol
V
V
T
P
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
Symbol Parameter
V
V
V
V
I
I
V
Range
Commercial
Industrial
LO
LI
DD
TERM
STG
D
OH
IL
IH
OL
IH
IL
Mode
Not Selected
(Power-down)
Output Disabled
Read
Write
(min) = –0.3V (DC); V
(max) = V
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Output Leakage
DD
+ 0.3V (DC); V
Parameter
Supply voltage with Respect to GND
Terminal Voltage with Respect to GND
Storage Temperature
Power Dissipation
IL
Ambient Temperature
(min) = –2.0V (pulse width - 2.0 ns).
WE
WE
WE
WE
WE
–40°C to +85°C
X
H
H
L
IH
0°C to +70°C
(1)
(max) = V
(1)
CE
CE
CE
CE
CE
H
L
L
L
Test Conditions
V
V
GND ≤ V
GND ≤ V
DD
DD
DD
(1)
+ 2.0V (pulse width - 2.0 ns).
OE
OE
OE
OE
OE
= Min., I
= Min., I
X
H
X
L
OUT
IN
(Over Operating Range)
≤ V
OH
OL
≤ V
= 8.0 mA
= –4.0 mA
DD
DD
1-800-379-4774
V
3.3V +10%,-5%
, Outputs Disabled
DD
I/O Operation
(8ns)
High-Z
High-Z
D
D
OUT
IN
–0.5 to V
–0.5 to +4.0
–65 to +150
Value
1.0
DD
+ 0.5
V
V
3.3V + 10%
3.3V + 10%
DD
Min.
I
–0.3
SB
2.4
2.0
–1
–1
—
DD
Current
1
I
I
I
CC
CC
CC
, I
(10 ns)
Unit
°C
W
V
V
SB
2
V
DD
Max.
0.4
0.8
—
1
1
+ 0.3
Unit
µA
µA
V
V
V
V
3