BT234X-800D,127 NXP Semiconductors, BT234X-800D,127 Datasheet - Page 7

• Manufacturer Part Number: BT234X-800D,127
• Description: Triacs 4Q Triac
• Manufacturer: NXP Semiconductors

Specifications of BT234X-800D,127

• Rohs: yes
• Mounting Style: Through Hole
• Package / Case: TO-220F-3
• Factory Pack Quantity: 50

NXP Semiconductors
7. Characteristics
Table 7.
BT234X-800D
Product data sheet
Symbol
Static characteristics
I
I
I
V
V
I
Dynamic characteristics
dV
dI
t
GT
L
H
D
gt
T
GT
com
D
/dt
/dt
Characteristics
Parameter
gate trigger current
latching current
holding current
on-state voltage
gate trigger voltage
off-state current
rate of rise of off-state voltage V
rate of change of
commutating current
gate-controlled turn-on time
All information provided in this document is subject to legal disclaimers.
Conditions
V
see
V
see
V
see
V
see
V
see
V
see
V
see
V
see
V
I
V
see
V
see
V
waveform; gate open circuit
V
dV
condition); gate open circuit
I
dI
T
TM
D
D
D
D
D
D
D
D
D
D
D
D
DM
D
G
= 6 A; T
com
/dt = 5 A/µs
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; T
= 12 V; I
= 400 V; I
= 800 V; T
= 400 V; I
= 6 A; V
Figure 7
Figure 7
Figure 7
Figure 7
Figure 8
Figure 8
Figure 8
Figure 8
Figure 11
Figure 11
= 536 V; T
/dt = 20 V/µs; (snubberless
Rev. 1 — 4 October 2011
j
= 25 °C; see
T
T
T
T
G
G
G
G
T
D
j
T
T(RMS)
= 0.1 A; T2+ G+; T
= 0.1 A; T2+ G-; T
= 0.1 A; T2- G-; T
= 0.1 A; T2- G+; T
= 0.1 A; T
= 25 °C; see
= 0.1 A; T2+ G+; T
= 0.1 A; T2+ G-; T
= 0.1 A; T2- G-; T
= 0.1 A; T2- G+; T
= 800 V; I
j
= 0.1 A; T
= 125 °C
j
= 125 °C; exponential
= 4 A;
j
G
= 25 °C;
Figure 10
j
= 0.1 A;
= 125 °C;
Figure 9
j
j
j
j
j
j
= 25 °C;
j
j
= 25 °C;
= 25 °C;
= 25 °C;
= 25 °C;
= 25 °C;
= 25 °C;
= 25 °C;
Min
-
-
-
-
-
-
-
-
-
-
-
0.25
-
-
-
-
BT234X-800D
Typ
-
-
-
-
-
-
-
-
-
1.3
0.7
0.4
0.1
50
1.2
2
© NXP B.V. 2011. All rights reserved.
Max
5
5
5
10
10
15
10
10
6
1.5
1.5
-
0.5
-
-
-
4Q Triac
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
mA
V/µs
A/ms
µs
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