MT48H8M32LFB5-75:H Micron Technology Inc, MT48H8M32LFB5-75:H Datasheet - Page 64

• Manufacturer Part Number: MT48H8M32LFB5-75:H
• Description: IC SDRAM 256MBIT 133MHZ 90VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT48H8M32LFB5-75:H

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 44:
PDF:09005aef8219eeeb/Source: 09005aef8219eedd
256mb_x16_sdram_y36m_1.fm - Rev G 6/09 EN
DQML, DQMH
Command
Address
BA[1:0]
DQM/
CKE
A10
CLK
DQ
t CKS
t CMS
t AS
t AS
t AS
ACTIVE
T0
BANK
ROW
ROW
READ – Continuous Page Burst
t CKH
t CMH
t AH
t AH
t AH
t RCD
t CL
Notes: 1. For this examples, CL = 2.
T1
NOP
t CH
2. Page left open; no
t CMS
t CK
COLUMN m
T2
BANK
READ
t CMH
CAS Latency
T3
NOP
t LZ
t AC
t
RP.
T4
NOP
D
OUT
t OH
Continuous-page burst does not self-terminate
m
1024 (x16) locations within same row
64
t AC
Continuous page completed
Can use BURST TERMINATE command
D
T5
OUT
NOP
t OH
m+1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t AC
D
T6
OUT
NOP
256Mb: x16, x32 Mobile SDRAM
t OH
t AC
m+2
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Tn + 1
D
NOP
OUT
t OH
m-1
t AC
©2006 Micron Technology, Inc. All rights reserved.
BURST TERM
Tn + 2
2
Dout m
Timing Diagrams
t OH
t AC
Tn + 3
D
OUT
NOP
t OH
m+1
t HZ
Don’t Care
Undefined
Tn + 4
NOP