IS45S32200E-6TLA1 ISSI, Integrated Silicon Solution Inc, IS45S32200E-6TLA1 Datasheet - Page 34

• Manufacturer Part Number: IS45S32200E-6TLA1
• Description: IC SDRAM 64MBIT 166MHZ 86TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS45S32200E-6TLA1

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 64M (2Mx32)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 86-TSOPII
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS45S32200E
DC ELECTRICAL CHARACTERISTICS
Notes:
1. These are the values at the minimum cycle time. Since the currents are transient, these values decrease as the cycle time
2. Icc
34
Symbol
I
I
V
V
I
I
I
I
I
I
I
I
OL
IL
CC1
CC2P
CC2PS
CC3P
CC3PS
CC4
CC5
CC6
O H
OL
increases. Also note that a bypass capacitor of at least 0.01 µF should be inserted between V
chip to suppress power supply voltage noise (voltage drops) due to these transient currents.
1
and Icc
Parameter
Input Leakage Current
Output Leakage Current
Output High Voltage Level
Output Low Voltage Level
Operating Current
Precharge Standby Current
(In Power-Down Mode)
Active Standby Current
(In Power-Down Mode)
Operating Current
(In Burst Mode)
Auto-Refresh Current
Self-Refresh Current
4
depend on the output load. The maximum values for Icc
(1)
(1,2)
Test Condition
0V V
the tested pin at 0V
Output is disabled, 0V V
I
I
One Bank Operation,
Burst Length=1
t
I
CKE V
CKE V
t
I
BL = 4; 4 banks activated
t
t
CKE 0.2V
OUT
OUT
RC
OUT
CK
OUT
RC
CLK
= t
= t
= 0mA
= 0mA
= t
= –2 mA
= +2 mA
t
RC
IN
CK
RC
CLK
(min.)
IL
IL
(
(
V
(
(
MIN
MIN
(
MIN
MAX
MAX
DD
)
)
(Recommended Operation Conditions unless otherwise noted.)
)
, with pins other than
)
)
OUT
CAS latency = 3
CAS latency = 3
CAS latency = 3
V
DD
t
t
t
t
1
CK
CK
CK
CK
Integrated Silicon Solution, Inc. — www.issi.com
and Icc
=
=
= 15ns
= 10ns
4
are obtained with the output open state.
A1
A1
A2
A1
A1
A2
A1
A1
A2
A1
A1
A2
A1
A1
A2
Speed
-6
-7
-7
—
—
—
-6
-7
-7
-6
-7
-7
-6
-7
-7
—
DD
and GND for each memory
Min.
2.4
–5
–5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
150
130
130
185
180
180
185
160
160
0.4
—
5
5
2
2
2
8
8
8
2
02/07/08
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
µA
µA
Rev. A
V
V