MT48LC32M8A2P-6A:D Micron Technology Inc, MT48LC32M8A2P-6A:D Datasheet - Page 20

IC SDRAM 256MBIT 167MHZ 54TSOP

MT48LC32M8A2P-6A:D

Manufacturer Part Number
MT48LC32M8A2P-6A:D
Description
IC SDRAM 256MBIT 167MHZ 54TSOP
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT48LC32M8A2P-6A:D

Format - Memory
RAM
Memory Type
SDRAM
Memory Size
256M (32M x 8)
Speed
167MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
54-TSOP II
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Table 6: Thermal Impedance Simulated Values
Figure 10: Example: Temperature Test Point Location, 54-Pin TSOP (Top View)
PDF: 09005aef8091e6d1
256Mb_sdr.pdf - Rev. N 1/10 EN
Revision
Die
D
54-ball VFBGA
Test point
60-ball FBGA
54-pin TSOP
Package
Notes:
Substrate
1. For designs expected to last beyond the die revision listed, contact Micron Applications
2. Thermal resistance data is sampled from multiple lots, and the values should be viewed
3. These are estimates; actual results may vary.
2-layer
4-layer
2-layer
4-layer
2-layer
4-layer
Engineering to confirm thermal impedance values.
as typical.
11.11mm
Θ JA (°C/W)
Airflow =
0m/s
64.9
51.5
40.9
81
44
67
22.22mm
20
Θ JA (°C/W)
Airflow =
Temperature and Thermal Impedance
1m/s
63.8
47.3
50.8
41.6
51.2
35.1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Θ JA (°C/W)
Airflow =
256Mb: x4, x8, x16 SDRAM
2m/s
57.6
44.5
44.8
38.1
47.8
32.2
5.08mm
© 1999 Micron Technology, Inc. All rights reserved.
Θ JB (°C/W) Θ JC (°C/W)
10.16mm
45.3
39.1
31.4
31.4
19.7
18.6
10.3
3.2
6.7

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