BSP41 T/R NXP Semiconductors, BSP41 T/R Datasheet - Page 3

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BSP41 T/R

Manufacturer Part Number
BSP41 T/R
Description
Transistors Bipolar - BJT TRANS MED PWR TAPE-7
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BSP41 T/R

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
70 V
Collector- Emitter Voltage Vceo Max
60 V
Emitter- Base Voltage Vebo
5 V
Collector-emitter Saturation Voltage
5 V
Gain Bandwidth Product Ft
100 MHz
Dc Collector/base Gain Hfe Min
30 at 100 uA at 5 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-223
Continuous Collector Current
1 A
Maximum Power Dissipation
1300 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
1000
Part # Aliases
BSP41,115
NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm
CHARACTERISTICS
T
Note
1. Pulse test: t
1999 Apr 26
R
R
I
I
h
V
V
f
amb
CBO
EBO
T
SYMBOL
SYMBOL
FE
CEsat
BEsat
NPN medium power transistors
th j-a
th j-s
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
= 25 °C unless otherwise specified.
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage I
base-emitter saturation voltage
transition frequency
p
≤ 300 μs; δ ≤ 0.01.
PARAMETER
PARAMETER
I
I
I
I
I
I
I
IC = 150 mA; IB = 15 mA; note 1
I
I
E
E
C
C
C
C
C
C
C
C
= 0; V
= 0; V
= 0; V
= 100 μA; V
= 100 mA; V
= 500 mA; V
= 150 mA; I
= 500 mA; I
= 500 mA; I
= 50 mA; V
3
CB
CB
EB
= 60 V
= 60 V; T
= 5 V
CONDITIONS
CE
B
B
B
CE
CE
CE
= 15 mA; note 1
= 50 mA; note 1
= 50 mA; note 1
= 10 V; f = 100 MHz
= 5 V; note 1
= 5 V; note 1
= 5 V; note 1
j
note 1
= 150 °C
CONDITIONS
30
100
50
100
MIN.
VALUE
BSP41; BSP43
93
12
Product data sheet
100
50
100
300
0.25
0.5
1
1.2
MAX.
UNIT
K/W
K/W
2
nA
μA
nA
V
V
V
V
MHz
.
UNIT

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