BSR30 T/R NXP Semiconductors, BSR30 T/R Datasheet

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BSR30 T/R

Manufacturer Part Number
BSR30 T/R
Description
Transistors Bipolar - BJT TRANS MED PWR TAPE-7
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BSR30 T/R

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
PNP
Collector- Base Voltage Vcbo
70 V
Collector- Emitter Voltage Vceo Max
60 V
Emitter- Base Voltage Vebo
5 V
Collector-emitter Saturation Voltage
5 V
Gain Bandwidth Product Ft
100 MHz
Dc Collector/base Gain Hfe Min
10 at 100 uA at 5 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-89
Continuous Collector Current
1 A
Maximum Power Dissipation
1350 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
1000
Part # Aliases
BSR30,115
Product data sheet
Supersedes data of 1999 Apr 26
dbook, halfpage
DATA SHEET
BSR30; BSR31; BSR33
PNP medium power transistors
DISCRETE SEMICONDUCTORS
M3D109
2004 Dec 13

Related parts for BSR30 T/R

BSR30 T/R Summary of contents

Page 1

... DATA SHEET dbook, halfpage BSR30; BSR31; BSR33 PNP medium power transistors Product data sheet Supersedes data of 1999 Apr 26 DISCRETE SEMICONDUCTORS M3D109 2004 Dec 13 ...

Page 2

... NXP Semiconductors PNP medium power transistors FEATURES • High current (max • Low voltage (max. 80 V). APPLICATIONS • Telephony and general industrial applications • Thick and thin-film circuits. DESCRIPTION PNP medium power transistor in a SOT89 plastic package. NPN complements: BSR40; BSR41 and BSR43. ...

Page 3

... NXP Semiconductors PNP medium power transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER V collector-base voltage CBO BSR30; BSR31 BSR33 V collector-emitter voltage CEO BSR30; BSR31 BSR33 V emitter-base voltage EBO I collector current (DC peak collector current CM I peak base current ...

Page 4

... NXP Semiconductors PNP medium power transistors CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER I collector-base cut-off current CBO I emitter-base cut-off current EBO h DC current gain FE BSR30 BSR31; BSR33 DC current gain BSR30 BSR31; BSR33 DC current gain BSR30 BSR31; BSR33 V collector-emitter saturation CEsat ...

Page 5

... NXP Semiconductors PNP medium power transistors PACKAGE OUTLINE Plastic surface-mounted package; collector pad for good heat transfer; 3 leads w M DIMENSIONS (mm are the original dimensions) UNIT 1.6 0.48 0.53 1.8 mm 1.4 0.35 0.40 1.4 OUTLINE VERSION IEC SOT89 2004 Dec ...

Page 6

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 7

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...

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