BC557 T/R NXP Semiconductors, BC557 T/R Datasheet - Page 4
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BC557 T/R
Manufacturer Part Number
BC557 T/R
Description
Transistors Bipolar - BJT TRANS GP TAPE RADIAL
Manufacturer
NXP Semiconductors
Datasheet
1.BC557B_TR.pdf
(8 pages)
Specifications of BC557 T/R
Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
PNP
Collector- Base Voltage Vcbo
50 V
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
0.1 A
Gain Bandwidth Product Ft
100 MHz
Dc Collector/base Gain Hfe Min
125 at 2 mA at 5 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-54
Dc Current Gain Hfe Max
125 at 2 mA at 5 V
Maximum Power Dissipation
500 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
2000
Part # Aliases
BC557,116
NXP Semiconductors
2004 Oct 11
handbook, full pagewidth
handbook, full pagewidth
PNP general purpose transistors
BC556A.
BC556B; BC557B.
h FE
h FE
400
300
200
100
300
200
100
−10
−10
0
0
−1
−2
−10
−1
−1
Fig.2 DC current gain; typical values.
Fig.3 DC current gain; typical values.
−1
−10
4
−10
V CE = −5 V
V CE = −5 V
−10
2
−10
2
BC556; BC557
I C (mA)
I C (mA)
Product data sheet
MBH727
MBH726
−10
−10
3
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