PEMX1 T/R NXP Semiconductors, PEMX1 T/R Datasheet - Page 3

• Manufacturer Part Number: PEMX1 T/R
• Description: Transistors Bipolar - BJT TRANS DOUBLE TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PEMX1 T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Dual
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 50 V
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 120 at 1 mA at 6 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-666
• Continuous Collector Current: 0.1 A
• Maximum Power Dissipation: 200 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 4000
• Part # Aliases: PEMX1,115

NXP Semiconductors
THERMAL CHARACTERISTICS
Notes
1. Transistor mounted on an FR4 printed-circuit board.
2. The only recommended soldering is reflow soldering.
CHARACTERISTICS
T
Note
1. Pulse test: t
2001 Nov 07
R
Per transistor
I
I
h
V
C
f
SYMBOL
SYMBOL
amb
CBO
EBO
T
FE
CEsat
NPN general purpose double transistor
th j-a
c
= 25 °C unless otherwise specified.
thermal resistance from junction to ambient
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation
voltage
collector capacitance
transition frequency
p
≤ 300 μs; δ ≤ 0.02.
PARAMETER
PARAMETER
V
V
V
V
I
V
I
C
C
CB
CB
EB
CE
CB
= 50 mA; I
= 2 mA; V
= 4 V; I
= 30 V; I
= 30 V; I
= 6 V; I
= 12 V; I
CONDITIONS
C
C
3
CE
E
E
B
E
= 0
= 1 mA
notes 1 and 2
= 0
= 0; T
= 5 mA; note 1
= I
= 12 V; f = 100 MHz
e
CONDITIONS
= 0; f = 1MHz
j
= 150 °C
−
−
−
120
−
−
100
MIN.
VALUE
416
100
10
100
−
200
1.5
−
MAX.
Product data sheet
PEMX1
UNIT
K/W
nA
μA
nA
mV
pF
MHz
UNIT