BCP68-25 /T3 NXP Semiconductors, BCP68-25 /T3 Datasheet - Page 14

• Manufacturer Part Number: BCP68-25 /T3
• Description: Transistors Bipolar - BJT TRANS MED PWR TAPE13
• Manufacturer: NXP Semiconductors

Specifications of BCP68-25 /T3

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 32 V
• Collector- Emitter Voltage Vceo Max: 20 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 170 MHz
• Dc Collector/base Gain Hfe Min: 160 at 500 mA at 1 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-223
• Continuous Collector Current: 1 A
• Maximum Power Dissipation: 1400 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 4000
• Part # Aliases: BCP68-25,135

NXP Semiconductors
BCP68_BC868_BC68PA
Product data sheet
Fig 15. DC current gain as a function of collector
Fig 17. Base-emitter voltage as a function of collector
V
h
(V)
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
FE
BE
400
300
200
100
1.2
0.8
0.4
0
0
10
10
V
current; typical values
V
current; typical values
–4
–1
amb
amb
amb
amb
amb
amb
CE
CE
= 1 V
= 1 V
= 100 C
= 25 C
= 55 C
= 55 C
= 25 C
= 100 C
10
1
–3
(1)
(2)
(3)
10
10
–2
(1)
(2)
(3)
10
10
–1
2
10
All information provided in this document is subject to legal disclaimers.
1
006aac694
3
006aac695
I
I
C
C
(A)
(A)
10
Rev. 8 — 18 October 2011
10
4
Fig 16. Collector current as a function of
Fig 18. Collector-emitter saturation voltage as a
V
BCP68; BC868; BC68PA
CEsat
(A)
(V)
I
10
10
10
(1) T
(2) T
(3) T
C
2.4
1.6
0.8
0.0
–1
–2
–3
1
10
0
T
collector-emitter voltage; typical values
I
function of collector current; typical values
C
–1
amb
amb
amb
amb
/I
B
20 V, 2 A NPN medium power transistors
= 10
= 25 C
= 100 C
= 25 C
= 55 C
1
1
10
2
I
B
(mA) = 10
8
6
4
2
(1)
(2)
(3)
10
3
2
© NXP B.V. 2011. All rights reserved.
10
9
7
5
3
1
4
006aac710
006aac696
3
V
I
C
CE
(mA)
(V)
10
5
4
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