2PD601AS T/R NXP Semiconductors, 2PD601AS T/R Datasheet - Page 5

• Manufacturer Part Number: 2PD601AS T/R
• Description: Transistors Bipolar - BJT TRANS GP TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of 2PD601AS T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 60 V
• Collector- Emitter Voltage Vceo Max: 50 V
• Emitter- Base Voltage Vebo: 6 V
• Collector-emitter Saturation Voltage: 6 V
• Maximum Dc Collector Current: 0.1 A
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 290 at 2 mA at 10 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-346
• Continuous Collector Current: 0.1 A
• Dc Current Gain Hfe Max: 290 at 2 mA at 10 V
• Maximum Power Dissipation: 250 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: 2PD601AS,115

NXP Semiconductors
2PD601ART_1
Product data sheet
Fig 3. DC current gain as a function of collector
Fig 5. Base-emitter saturation voltage as a function of
V
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
h
BEsat
(V)
FE
500
400
300
200
100
1.3
0.9
0.5
0.1
0
10
10
V
current; typical values
I
collector current; typical values
C
amb
amb
amb
amb
amb
amb
CE
/I
1
1
B
= 10 V
= 10
= 150 C
= 25 C
= 55 C
= 55 C
= 25 C
= 150 C
1
1
(1)
(2)
(3)
(1)
(2)
(3)
10
10
I
I
C
C
006aaa992
(mA)
006aaa994
(mA)
10
10
Rev. 01 — 15 March 2007
2
2
Fig 4. Collector current as a function of
Fig 6. Collector-emitter saturation voltage as a
V
(1) T
(2) T
(3) T
CEsat
(A)
(V)
I
10
10
C
0.08
0.06
0.04
0.02
0.1
50 V, 100 mA NPN general-purpose transistor
0
1
1
2
10
T
collector-emitter voltage; typical values
I
function of collector current; typical values
C
0
amb
amb
amb
amb
/I
1
B
= 10
= 25 C
= 150 C
= 25 C
= 55 C
2
I
B
1
(mA) = 0.56
(1)
(2)
(3)
4
2PD601ART
6
10
I
© NXP B.V. 2007. All rights reserved.
C
8
(mA)
006aaa993
006aaa995
V
CE
0.50
0.44
0.38
0.32
0.26
0.20
0.14
0.08
0.02
(V)
10
10
2
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