2N6609G ON Semiconductor, 2N6609G Datasheet
2N6609G
Manufacturer Part Number
2N6609G
Description
Transistors Bipolar - BJT 16A 140V 150W PNP
Manufacturer
ON Semiconductor
Datasheet
1.2N6609G.pdf
(5 pages)
Specifications of 2N6609G
Product Category
Transistors Bipolar - BJT
Rohs
yes
Transistor Polarity
PNP
Collector- Base Voltage Vcbo
160 V
Collector- Emitter Voltage Vceo Max
140 V
Emitter- Base Voltage Vebo
7 V
Collector-emitter Saturation Voltage
140 V
Maximum Dc Collector Current
16 A
Dc Collector/base Gain Hfe Min
15
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-204-2 (TO-3)
Continuous Collector Current
16 A
Maximum Power Dissipation
150 W
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
100
2N3773
NPN Power Transistors
power audio, disk head positioners and other linear applications. This
device can also be used in power switching circuits such as relay or
solenoid drivers, DC−DC converters or inverters.
Features
•
•
•
•
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC Registered Data.
2. Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%.
*For additional information on our Pb−Free strategy and soldering details, please
© Semiconductor Components Industries, LLC, 2013
April, 2013 − Rev. 11
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Collector − Emitter Voltage
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Collector Current
Base Current
Total Power Dissipation @ T
Operating and Storage Junction
Thermal Resistance,
The 2N3773 is a PowerBaset power transistor designed for high
High Safe Operating Area (100% Tested) 150 W @ 100 V
Completely Characterized for Linear Operation
High DC Current Gain and Low Saturation Voltage
For Low Distortion Complementary Designs
This is a Pb−Free Device
Derate above 25°C
Temperature Range
Junction−to−Case
Characteristic
h
V
FE
CE(sat)
− Continuous
− Peak (Note 2)
= 15 (Min) @ 8.0 A, 4.0 V
Rating
− Continuous
− Peak (Note 2)
= 1.4 V (Max) @ I
(Note 1)
A
= 25°C
Symbol
R
qJC
C
Symbol
T
V
V
V
V
= 8.0 A, I
J
P
, T
CEO
CEX
CBO
EBO
I
I
C
B
D
stg
Max
1.17
−65 to +200
B
Value
0.855
= 0.8 A
140
160
160
150
16
30
15
7
4
°C/W
1
Unit
W/°C
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
°C
W
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
POWER TRANSISTORS
CASE 1−07
TO−204
ORDERING INFORMATION
A
YY
WW
G
http://onsemi.com
140 V, 150 W
16 A NPN
= Assembly Location
= Year
= Work Week
= Pb−Free Package
Publication Order Number:
MARKING
DIAGRAM
2N3773G
AYYWW
MEX
2N3773/D
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2N6609G Summary of contents
Page 1
... THERMAL CHARACTERISTICS Characteristic Symbol Thermal Resistance, R qJC Junction−to−Case *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013 April, 2013 − Rev 8 0 ...
Page 2
ELECTRICAL CHARACTERISTICS Î Î Î Î Î ...
Page 3
NPN 300 150°C 200 100 - 55°C 25° 7.0 5.0 0.2 0.3 0.5 0.7 1.0 2.0 3 COLLECTOR CURRENT (AMPS) C Figure 1. DC Current Gain 2.0 I ...
Page 4
V , COLLECTOR−BASE VOLTAGE (V) CB Figure 7. Output Capacitance 5.0 3.0 2.0 1.0 0.5 0.3 0.2 0.1 0.05 0.03 3.0 There are two limitations on the power handling ability of ...
Page 5
... SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...