2N6609G ON Semiconductor, 2N6609G Datasheet - Page 3

• Manufacturer Part Number: 2N6609G
• Description: Transistors Bipolar - BJT 16A 140V 150W PNP
• Manufacturer: ON Semiconductor

Specifications of 2N6609G

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 160 V
• Collector- Emitter Voltage Vceo Max: 140 V
• Emitter- Base Voltage Vebo: 7 V
• Collector-emitter Saturation Voltage: 140 V
• Maximum Dc Collector Current: 16 A
• Dc Collector/base Gain Hfe Min: 15
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-204-2 (TO-3)
• Continuous Collector Current: 16 A
• Maximum Power Dissipation: 150 W
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 100

300
200
100
7.0
5.0
2.0
1.6
1.2
0.8
0.4
2.0
1.6
1.2
0.8
0.4
70
50
30
20
10
0
0
0.2
0.2
0.05
T
V
C
0.3
0.3
BE(sat)
I
150°C
= 25°C
C
0.07 0.1
= 4 A
Figure 3. Collector Saturation Region
25°C
0.5 0.7 1.0
0.5 0.7 1.0
25°C
150°C
Figure 1. DC Current Gain
I
I
V
C
C
I
C
CE
, COLLECTOR CURRENT (AMPS)
, COLLECTOR CURRENT (AMPS)
Figure 5. “On” Voltage
= 8 A
I
B
= 4 V
, BASE CURRENT (AMPS)
0.2 0.3
- 55°C
V
I
C
CE(sat)
/I
NPN
B
2.0
= 10
2.0 3.0
0.5 0.7 1.0
3.0
I
C
150°C
= 16 A
5.0
5.0 7.0
7.0 10
25°C
2.0 3.0
10
http://onsemi.com
20
20
3
300
200
100
7.0
5.0
2.0
1.6
1.2
0.8
0.4
2.0
1.6
1.2
0.8
0.4
70
50
30
20
10
0
0.05 0.07 0.1
0.2 0.3
0.2 0.3
150°C
T
25°C
V
25°C
C
I
BE(sat)
C
= 25°C
= 4 A
Figure 4. Collector Saturation Region
- 55°C
0.5 0.7 1.0
0.5 0.7 1.0
Figure 2. DC Current Gain
I
I
C
I
C
C
, COLLECTOR CURRENT (AMPS)
, COLLECTOR CURRENT (AMPS)
Figure 6. “On” Voltage
= 8 A
150°C
I
0.2
B
, BASE CURRENT (AMPS)
0.3
V
CE
PNP
= 4 V
2.0
I
2.0 3.0
C
0.5 0.7 1.0
/I
I
B
C
= 10
= 16 A
3.0
150°C
V
CE(sat)
5.0
5.0 7.0
7.0 10
25°C
2.0 3.0
10
5.0
20
20