2N6609G ON Semiconductor, 2N6609G Datasheet - Page 4

• Manufacturer Part Number: 2N6609G
• Description: Transistors Bipolar - BJT 16A 140V 150W PNP
• Manufacturer: ON Semiconductor

Specifications of 2N6609G

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 160 V
• Collector- Emitter Voltage Vceo Max: 140 V
• Emitter- Base Voltage Vebo: 7 V
• Collector-emitter Saturation Voltage: 140 V
• Maximum Dc Collector Current: 16 A
• Dc Collector/base Gain Hfe Min: 15
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-204-2 (TO-3)
• Continuous Collector Current: 16 A
• Maximum Power Dissipation: 150 W
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 100

a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation: i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
There are two limitations on the power handling ability of
1000
100
10
0
V
CB
Figure 7. Output Capacitance
, COLLECTOR−BASE VOLTAGE (V)
50
100
0.05
0.03
5.0
3.0
2.0
1.0
0.5
0.3
0.2
0.1
30
20
10
3.0
Figure 9. Forward Bias Safe Operating Area
5.0 7.0
V
TYPICAL CHARACTERISTICS
150
CE
BONDING WIRE LIMIT
THERMAL LIMIT
@ T
SECOND BREAKDOWN LIMIT
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
f = 1 MHz
T
10
C
A
C
= 25°C, SINGLE PULSE
= 25°C
http://onsemi.com
− V
20
CE
200
dc
30
4
10,000
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
< 200_C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
1000
50
100
The data of Figure 9 is based on T
70
0
100
1
1.0 ms
10 ms
40 ms
V
100 ms
200 ms
EB
Figure 8. Input Capacitance
100 ms
500 ms
200
2
, EMITTER−BASE VOLTAGE (V)
300
3
4
5
J(pk)
= 200_C; T
6
f = 1 MHz
T
A
= 25°C
7
J(pk)
C
8
is