2N6609G ON Semiconductor, 2N6609G Datasheet - Page 5

• Manufacturer Part Number: 2N6609G
• Description: Transistors Bipolar - BJT 16A 140V 150W PNP
• Manufacturer: ON Semiconductor

Specifications of 2N6609G

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 160 V
• Collector- Emitter Voltage Vceo Max: 140 V
• Emitter- Base Voltage Vebo: 7 V
• Collector-emitter Saturation Voltage: 140 V
• Maximum Dc Collector Current: 16 A
• Dc Collector/base Gain Hfe Min: 15
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-204-2 (TO-3)
• Continuous Collector Current: 16 A
• Maximum Power Dissipation: 150 W
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 100

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2
1
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A
−Q−
U
N
L
0.13 (0.005)
D
2 PL
0.13 (0.005)
100
80
60
40
20
0
C
G
0
M
−Y−
K
T
M
−T−
B
Y
T
M
Q
SEATING
PLANE
40
N. American Technical Support: 800−282−9855 Toll Free
Europe, Middle East and Africa Technical Support:
Japan Customer Focus Center
PACKAGE DIMENSIONS
USA/Canada
Phone: [phone]
Phone: 81−3−5817−1050
M
Figure 10. Power Derating
Y
T
http://onsemi.com
C
TO−204 (TO−3)
, CASE TEMPERATURE (°C)
M
CASE 1−07
DERATING
THERMAL
ISSUE Z
80
5
120
NOTES:
160
1. DIMENSIONING AND TOLERANCING PER ANSI
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
Y14.5M, 1982.
REFERENCED TO-204AA OUTLINE SHALL APPLY.
STYLE 1:
DIM
A
B
C
D
E
G
H
K
N
Q
U
V
L
CASE: COLLECTOR
PIN 1. BASE
2. EMITTER
0.250
0.038
0.055
0.440
0.151
0.131
MIN
---
---
1.550 REF
0.430 BSC
0.215 BSC
0.665 BSC
1.187 BSC
INCHES
200
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For additional information, please contact your local
Sales Representative
1.050
0.335
0.043
0.070
0.480
0.830
0.165
0.188
MAX
11.18
MILLIMETERS
MIN
6.35
0.97
1.40
3.84
3.33
---
---
39.37 REF
10.92 BSC
16.89 BSC
30.15 BSC
5.46 BSC
26.67
12.19
21.08
MAX
8.51
1.09
1.77
4.19
4.77
2N3773/D