BSR31 T/R NXP Semiconductors, BSR31 T/R Datasheet - Page 2

• Manufacturer Part Number: BSR31 T/R
• Description: Transistors Bipolar - BJT TRANS MED PWR TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of BSR31 T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 70 V
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 30 at 100 uA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-89
• Continuous Collector Current: 1 A
• Maximum Power Dissipation: 1350 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 1000
• Part # Aliases: BSR31,115

NXP Semiconductors
FEATURES
• High current (max. 1 A)
• Low voltage (max. 80 V).
APPLICATIONS
• Telephony and general industrial applications
• Thick and thin-film circuits.
DESCRIPTION
PNP medium power transistor in a SOT89 plastic package.
NPN complements: BSR40; BSR41 and BSR43.
MARKING
ORDERING INFORMATION
2004 Dec 13
BSR30
BSR31
BSR33
BSR30
BSR31
BSR33
TYPE NUMBER
PNP medium power transistors
TYPE NUMBER
NAME
SC-62
MARKING CODE
plastic surface mounted package; collector pad for good heat
transfer; 3 leads
BR1
BR2
BR4
2
PINNING
DESCRIPTION
PACKAGE
Fig.1 Simplified outline (SOT89) and symbol.
PIN
1
2
3
3
BSR30; BSR31; BSR33
emitter
collector
base
2
1
DESCRIPTION
Product data sheet
3
sym079
VERSION
SOT89
2
1