BC858W T/R NXP Semiconductors, BC858W T/R Datasheet - Page 2

• Manufacturer Part Number: BC858W T/R
• Description: Transistors Bipolar - BJT TRANS GP TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of BC858W T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 30 V
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 125 at 2 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-323
• Continuous Collector Current: 0.1 A
• Maximum Power Dissipation: 200 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: BC858W,115

NXP Semiconductors
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 65 V).
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
PNP transistor in a SOT323 plastic package.
NPN complements: BC846W, BC847W and BC848W.
MARKING
Note
1. * = -: made in Hong Kong.
2002 Feb 04
BC856W
BC856AW
BC856BW
BC857W
BC857AW
BC857BW
BC857CW
BC858W
PNP general purpose transistors
* = t: made in Malaysia.
TYPE NUMBER
MARKING CODE
3M*
3D*
3H*
3G*
3A*
3B*
3E*
3F*
(1)
2
PINNING
handbook, halfpage
Fig.1
PIN
1
2
3
Top view
Simplified outline (SOT323; SC70) and
symbol.
1
base
emitter
collector
3
BC856W; BC857W;
DESCRIPTION
2
MAM048
Product data sheet
1
BC858W
3
2