BC849CW /T3 NXP Semiconductors, BC849CW /T3 Datasheet - Page 2

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BC849CW /T3

Manufacturer Part Number
BC849CW /T3
Description
Transistors Bipolar - BJT TRANS LOW NOISE TAPE-11
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BC849CW /T3

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
30 V
Collector- Emitter Voltage Vceo Max
30 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
0.1 A
Gain Bandwidth Product Ft
100 MHz
Dc Collector/base Gain Hfe Min
420 at 2 mA at 5 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-323
Maximum Power Dissipation
200 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
10000
Part # Aliases
BC849CW,135
NXP Semiconductors
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 45 V).
APPLICATIONS
• Low noise stages in tape recorders, hi-fi amplifiers and
DESCRIPTION
NPN transistor in a SOT323 plastic package.
PNP complements: BC859W and BC860W.
MARKING
Note
1. ∗ = - : Made in Hong Kong.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 12
BC849BW
BC849CW
V
V
V
I
I
I
P
T
T
T
C
CM
BM
SYMBOL
other audio-frequency equipment.
NUMBER
stg
j
amb
CBO
CEO
EBO
tot
NPN general purpose transistors
∗ = t : Made in Malaysia.
TYPE
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
MARKING
BC849W
BC850W
BC849W
BC850W
CODE
2B∗
2C∗
(1)
PARAMETER
BC850BW
BC850CW
NUMBER
TYPE
MARKING
CODE
2G∗
2F∗
open emitter
open base
open collector
T
(1)
amb
≤ 25 °C; note 1
2
CONDITIONS
PINNING
handbook, halfpage
Fig.1
PIN
1
2
3
Simplified outline (SOT323) and symbol.
Top view
base
emitter
collector
1
3
−65
−65
BC849W; BC850W
MIN.
DESCRIPTION
2
MAM062
30
50
30
45
5
100
200
200
200
+150
150
+150
Product data sheet
MAX.
1
3
2
V
V
V
V
V
mA
mA
mA
mW
°C
°C
°C
UNIT

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