BSS63 T/R NXP Semiconductors, BSS63 T/R Datasheet - Page 2

• Manufacturer Part Number: BSS63 T/R
• Description: Transistors Bipolar - BJT TRANS HV TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of BSS63 T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 110 V
• Collector- Emitter Voltage Vceo Max: 100 V
• Emitter- Base Voltage Vebo: 6 V
• Collector-emitter Saturation Voltage: 6 V
• Gain Bandwidth Product Ft: 85 MHz
• Dc Collector/base Gain Hfe Min: 30 at 10 mA at 1 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Continuous Collector Current: 0.1 A
• Maximum Power Dissipation: 250 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: BSS63,215

NXP Semiconductors
FEATURES
• Low current (max. 100 mA)
• High voltage (max. 100 V).
APPLICATIONS
• High-voltage general purpose
• Switching applications.
DESCRIPTION
PNP high-voltage transistor in a SOT23 plastic package.
NPN complement: BSS64.
MARKING
Note
1. ∗ = p : Made in Hong Kong.
ORDERING INFORMATION
2004 Jan 16
BSS63
BSS63
TYPE NUMBER
PNP high-voltage transistor
∗ = t : Made in Malaysia.
∗ = W : Made in China.
TYPE NUMBER
NAME
−
MARKING CODE
plastic surface mounted package; 3 leads
BM∗
(1)
2
PINNING
handbook, halfpage
DESCRIPTION
PACKAGE
PIN
1
2
3
Fig.1 Simplified outline (SOT23) and symbol.
Top view
base
emitter
collector
1
3
DESCRIPTION
2
MAM256
Product data sheet
1
VERSION
BSS63
SOT23
3
2