BSP62 T/R NXP Semiconductors, BSP62 T/R Datasheet - Page 4
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BSP62 T/R
Manufacturer Part Number
BSP62 T/R
Description
Transistors Bipolar - BJT TRANS DARLINGTON TAPE-7
Manufacturer
NXP Semiconductors
Datasheet
1.BSP62_TR.pdf
(7 pages)
Specifications of BSP62 T/R
Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
PNP
Collector- Base Voltage Vcbo
90 V
Collector- Emitter Voltage Vceo Max
80 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
1 A
Dc Collector/base Gain Hfe Min
1000 at 150 mA at 10 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-223-4
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
1000
Part # Aliases
BSP62,115
NXP Semiconductors
2001 May 31
handbook, full pagewidth
PNP Darlington transistors
handbook, full pagewidth
V
V
R1 = 56 Ω; R2 = 10 kΩ; R
V
Oscilloscope: input impedance Z
CE
i
BB
= −10 V; T = 200 μs; t
h FE
= 1.8 V; V
= −10 V.
6000
5000
4000
3000
2000
1000
−10
0
−1
CC
= −10.7 V.
p
= 6 μs; t
B
= 10 kΩ; R
i
= 50 Ω.
r
= t
f
C
≤ 3 ns.
oscilloscope
= 18 Ω.
−1
V i
Fig.2 DC current gain; typical values.
Fig.3 Test circuit for switching times.
(probe)
450 Ω
R1
R2
R B
V BB
4
−10
R C
V CC
DUT
V o
MGD624
(probe)
450 Ω
BSP60; BSP61; BSP62
oscilloscope
−10
2
I C (mA)
Product data sheet
MGD839
−10
3