PUMZ2 T/R NXP Semiconductors, PUMZ2 T/R Datasheet - Page 6

• Manufacturer Part Number: PUMZ2 T/R
• Description: Transistors Bipolar - BJT TRANS DOUBLE TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PUMZ2 T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Collector- Base Voltage Vcbo: 60 V
• Collector- Emitter Voltage Vceo Max: 50 V
• Emitter- Base Voltage Vebo: 7 V
• Collector-emitter Saturation Voltage: 7 V
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 120 at 1 mA at 6 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363
• Continuous Collector Current: 0.15 A
• Maximum Power Dissipation: 300 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: PUMZ2,115

NXP Semiconductors
Fig 2.
PIMZ2_PUMZ2_6
Product data sheet
Plastic surface-mounted package; 6 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
Package outline SOT363 (SC-88)
OUTLINE
VERSION
SOT363
1.1
0.8
A
max
0.1
A 1
6
1
0.30
0.20
b p
y
IEC
pin 1
index
e 1
0.25
0.10
c
D
e
2
5
2.2
1.8
b p
D
JEDEC
1.35
1.15
E
4
3
Rev. 06 — 17 November 2009
REFERENCES
0
1.3
e
w
B
M
B
0.65
e
1
SC-88
JEITA
scale
1
H E
2.2
2.0
A
NPN/PNP general-purpose double transistors
0.45
0.15
L p
A 1
2 mm
0.25
0.15
Q
H E
E
0.2
v
detail X
PIMZ2; PUMZ2
PROJECTION
0.2
EUROPEAN
w
L p
Q
0.1
y
A
c
© NXP B.V. 2009. All rights reserved.
X
v
ISSUE DATE
M
04-11-08
06-03-16
A
SOT363
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