PEMZ1 T/R NXP Semiconductors, PEMZ1 T/R Datasheet - Page 5
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PEMZ1 T/R
Manufacturer Part Number
PEMZ1 T/R
Description
Transistors Bipolar - BJT TRANS DOUBLE TAPE-7
Manufacturer
NXP Semiconductors
Datasheet
1.PEMZ1_TR.pdf
(7 pages)
Specifications of PEMZ1 T/R
Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Dual
Transistor Polarity
NPN/PNP
Collector- Base Voltage Vcbo
50 V
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
5 V
Collector-emitter Saturation Voltage
5 V
Gain Bandwidth Product Ft
100 MHz
Dc Collector/base Gain Hfe Min
120 at 1 mA at 6 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-666
Continuous Collector Current
0.1 A
Maximum Power Dissipation
300 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
4000
Part # Aliases
PEMZ1,115
NXP Semiconductors
PACKAGE OUTLINE
2001 Nov 07
Plastic surface mounted package; 6 leads
NPN/PNP general purpose transistors
DIMENSIONS (mm are the original dimensions)
UNIT
mm
OUTLINE
VERSION
SOT666
0.6
0.5
A
S
0.27
0.17
b
p
pin 1 index
0.18
0.08
c
IEC
Y S
6
1
e 1
1.7
1.5
D
D
e
1.3
1.1
b p
E
5
2
JEDEC
0
1.0
e
REFERENCES
3
4
0.5
e
1
w
A
M
A
1.7
1.5
H
E
scale
EIAJ
1
5
0.3
0.1
L
p
0.1
w
A
0.1
y
2 mm
H E
E
detail X
PROJECTION
EUROPEAN
L p
Product data sheet
c
X
ISSUE DATE
01-01-04
01-08-27
PEMZ1
SOT666