MT48LC4M32B2TG-7:G TR Micron Technology Inc, MT48LC4M32B2TG-7:G TR Datasheet - Page 36
![IC SDRAM 128MBIT 143MHZ 86TSOP](/photos/7/22/72264/557-86-tsop_sml.jpg)
MT48LC4M32B2TG-7:G TR
Manufacturer Part Number
MT48LC4M32B2TG-7:G TR
Description
IC SDRAM 128MBIT 143MHZ 86TSOP
Manufacturer
Micron Technology Inc
Datasheet
1.MT48LC4M32B2P-7G_TR.pdf
(67 pages)
Specifications of MT48LC4M32B2TG-7:G TR
Format - Memory
RAM
Memory Type
SDRAM
Memory Size
128M (4Mx32)
Speed
143MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
86-TSOPII
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Figure 29:
Figure 30:
PDF: 09005aef80872800/Source: 09005aef80863355
128MbSDRAMx32_2.fm - Rev. L 1/09 EN
WRITE With Auto Precharge Interrupted by a READ
WRITE With Auto Precharge Interrupted by a WRITE
Notes:
Notes:
1. DQM is LOW.
1. DQM is LOW.
Internal
States
Internal
States
COMMAND
COMMAND
ADDRESS
ADDRESS
BANK m
BANK m
BANK n
BANK n
CLK
CLK
DQ
DQ
Page Active
Page Active
T0
NOP
T0
NOP
WRITE - AP
WRITE - AP
BANK n,
BANK n,
Page Active
Page Active
BANK n
BANK n
COL a
COL a
T1
T1
D
D
a
a
IN
IN
WRITE with Burst of 4
WRITE with Burst of 4
36
a + 1
a + 1
T2
T2
D
D
NOP
NOP
IN
IN
BANK m,
READ - AP
Micron Technology, Inc., reserves the right to change products or specifications without notice.
a + 2
T3
COL d
T3
BANK m
D
NOP
IN
Interrupt Burst, Write-Back
t
WR - BANK n
READ with Burst of 4
BANK m,
WRITE - AP
COL d
T4
T4
BANK m
CL = 3 (BANK m)
D
NOP
t
d
IN
Interrupt Burst, Write-Back
WR - BANK n
WRITE with Burst of 4
T5
T5
d + 1
NOP
NOP
D
IN
Precharge
t
RP - BANK n
T6
T6
d + 2
D
NOP
D
NOP
OUT
t RP - BANK n
d
IN
Precharge
©2001 Micron Technology, Inc. All rights reserved.
128Mb: x32 SDRAM
Register Definition
DON’T CARE
DON’T CARE
T7
T7
d + 3
D
d + 1
NOP
NOP
D
t WR - BANK m
OUT
t RP - BANK m
IN
Write-Back