BF821 /T3 NXP Semiconductors, BF821 /T3 Datasheet - Page 2

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BF821 /T3

Manufacturer Part Number
BF821 /T3
Description
Transistors Bipolar - BJT TRANS HV TAPE-11
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BF821 /T3

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
PNP
Collector- Base Voltage Vcbo
300 V
Collector- Emitter Voltage Vceo Max
300 V
Emitter- Base Voltage Vebo
5 V
Collector-emitter Saturation Voltage
5 V
Gain Bandwidth Product Ft
60 MHz
Dc Collector/base Gain Hfe Min
50 at 25 mA at 20 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-23
Continuous Collector Current
0.05 A
Maximum Power Dissipation
250 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
10000
Part # Aliases
BF821,235
NXP Semiconductors
FEATURES
• Low current (max. 50 mA)
• High voltage (max. 300 V).
APPLICATIONS
• Telephony and professional communication equipment.
DESCRIPTION
PNP transistor in a SOT23 plastic package.
NPN complements: BF820, BF822.
MARKING
Note
1. * = p : Made in Hong Kong.
ORDERING INFORMATION
2004 Jan 16
BF821
BF823
BF821
BF823
TYPENUMBER
PNP high-voltage transistors
* = t : Made in Malaysia.
* = W : Made in China.
TYPE NUMBER
NAME
MARKING CODE
plastic surface mounted package; 3 leads
plastic surface mounted package; 3 leads
1W*
1Y*
(1)
2
DESCRIPTION
PINNING
handbook, halfpage
PACKAGE
PIN
1
2
3
Fig.1 Simplified outline (SOT23) and symbol.
Top view
base
emitter
collector
1
3
DESCRIPTION
2
BF821; BF823
MAM256
SOT23
SOT23
Product data sheet
1
VERSION
3
2

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