PMBT4403 /T3 NXP Semiconductors, PMBT4403 /T3 Datasheet - Page 4

• Manufacturer Part Number: PMBT4403 /T3
• Description: Transistors Bipolar - BJT TRANS SW TAPE-11
• Manufacturer: NXP Semiconductors

Specifications of PMBT4403 /T3

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 40 V
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 200 MHz
• Dc Collector/base Gain Hfe Min: 30 at 0.1 mA at 1 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Continuous Collector Current: 0.6 A
• Maximum Power Dissipation: 250 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 10000
• Part # Aliases: PMBT4403,235

NXP Semiconductors
2004 Jan 21
handbook, full pagewidth
h FE
PNP switching transistor
300
200
100
V
R1 = 68 Ω; R2 = 325 Ω; R
V
Oscilloscope: input impedance Z
i
BB
−10
0
= −9.5 V; T = 500 µs; t
= 3.5 V; V
−1
CC
= −29.5 V.
p
B
= 10 µs; t
= 325 Ω; R
i
= 50 Ω.
r
−1
= t
C
oscilloscope
f
≤ 3 ns.
= 160 Ω.
V i
Fig.2 DC current gain; typical values.
Fig.3 Test circuit for switching times.
(probe)
450 Ω
R1
R2
−10
R B
V BB
4
R C
V CC
DUT
V o
MGD624
(probe)
450 Ω
−10
2
oscilloscope
V CE = −1 V
I C mA
PMBT4403
Product data sheet
MGD812
−10
3