PUMX2 T/R NXP Semiconductors, PUMX2 T/R Datasheet - Page 4

• Manufacturer Part Number: PUMX2 T/R
• Description: Transistors Bipolar - BJT DOUBLE NPN TRANSISTR
• Manufacturer: NXP Semiconductors

Specifications of PUMX2 T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Dual
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 60 V
• Collector- Emitter Voltage Vceo Max: 50 V
• Emitter- Base Voltage Vebo: 7 V
• Collector-emitter Saturation Voltage: 7 V
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 120 at 1 mA at 6 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363
• Continuous Collector Current: 0.15 A
• Maximum Power Dissipation: 300 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: PUMX2,115

NXP Semiconductors
8. Package outline
9. Packing information
PUMX2_2
Product data sheet
Table 8.
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
[2]
[3]
Type number
PUMX2
Fig 1.
For further information and the availability of packing methods, see
T1: normal taping
T2: reverse taping
Package outline SOT363 (SC-88)
Packing methods
Package Description
SOT363
Rev. 02 — 17 November 2009
2.2
2.0
Dimensions in mm
1.35
1.15
4 mm pitch, 8 mm tape and reel; T1
4 mm pitch, 8 mm tape and reel; T2
pin 1
index
6
1
0.65
1.3
2.2
1.8
NPN/NPN general-purpose double transistors
2
5
4
3
0.3
0.2
0.45
0.15
Section
0.25
0.10
1.1
0.8
[2]
[3]
[1]
06-03-16
13.
Packing quantity
3000
-115
-125
© NXP B.V. 2009. All rights reserved.
PUMX2
10000
-135
-165
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