2PA1774R /T3 NXP Semiconductors, 2PA1774R /T3 Datasheet - Page 5

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2PA1774R /T3

Manufacturer Part Number
2PA1774R /T3
Description
Transistors Bipolar - BJT TRANS GP TAPE-11
Manufacturer
NXP Semiconductors
Datasheet

Specifications of 2PA1774R /T3

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
PNP
Collector- Base Voltage Vcbo
60 V
Collector- Emitter Voltage Vceo Max
50 V
Emitter- Base Voltage Vebo
6 V
Collector-emitter Saturation Voltage
6 V
Gain Bandwidth Product Ft
100 MHz
Dc Collector/base Gain Hfe Min
180 at 1 mA at 6 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-416
Continuous Collector Current
0.15 A
Maximum Power Dissipation
150 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
10000
Part # Aliases
2PA1774R,135
NXP Semiconductors
9. Revision history
Table 7.
2PA1774_5
Product data sheet
Document ID
2PA1774_5
Modifications:
2PA1774_4
2PA1774_3
2PA1774_2
2PA1774_1
Revision history
Release date
20091117
20041124
20001212
19990601
19970709
This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
Figure 1 “Package outline SOT416
Rev. 05 — 17 November 2009
Data sheet status
Product data sheet
Product data sheet
Product specification
Preliminary specification -
Preliminary specification -
(SC-75)”: updated
Change notice
-
-
-
PNP general-purpose transistor
Supersedes
2PA1774_4
2PA1774_3
2PA1774_2
2PA1774_1
-
2PA1774
© NXP B.V. 2009. All rights reserved.
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