PEMT1 T/R NXP Semiconductors, PEMT1 T/R Datasheet - Page 3

• Manufacturer Part Number: PEMT1 T/R
• Description: Transistors Bipolar - BJT TRANS DOUBLE TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PEMT1 T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Dual
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 50 V
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 120 at 1 mA at 6 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-666
• Continuous Collector Current: 0.1 A
• Maximum Power Dissipation: 200 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 4000
• Part # Aliases: PEMT1,115

NXP Semiconductors
THERMAL CHARACTERISTICS
Notes
1. Transistor mounted on an FR4 printed-circuit board.
2. The only recommended soldering is reflow soldering.
CHARACTERISTICS
T
Note
1. Pulse test: t
2001 Nov 07
handbook, halfpage
R
Per transistor
I
I
h
V
C
f
SYMBOL
SYMBOL
amb
CBO
EBO
T
FE
CEsat
PNP general purpose double transistor
th j-a
c
V
Fig.2
CE
= 25 °C; unless otherwise specified.
h FE
400
300
200
100
= −5 V.
−10
0
−1
DC current gain as a function of collector
current; typical values.
thermal resistance from junction to ambient
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation
voltage
collector capacitance
transition frequency
p
≤ 300 μs; δ ≤ 0.02.
−1
PARAMETER
−10
PARAMETER
−10
2
I C (mA)
MHB987
−10
V
V
V
V
I
V
V
f = 100 MHz
C
CB
CB
EB
CE
CB
CE
= −50 mA; I
3
= −4 V; I
= −30 V; I
= −30 V; I
= −6 V; I
= −12 V; I
= −12 V; I
CONDITIONS
3
C
C
notes 1 and 2
E
E
B
E
C
= 0
= −1 mA
= 0
= 0; T
= −5 mA; note 1
= I
= −2 mA;
CONDITIONS
e
= 0; f = 1 MHz
j
= 150 °C
−
−
−
120
−
−
100
MIN.
VALUE
416
−100
−10
−100
−
−200
2.2
−
MAX.
Product data sheet
PEMT1
UNIT
K/W
nA
μA
nA
mV
pF
MHz
UNIT